Insulator–metal transition in 1T′-MoS2 under uniaxial strain

Xianqing Lin,Jun Ni

DOI: https://doi.org/10.1016/j.physleta.2015.09.025

IF: 2.707

2015-01-01

Physics Letters A

Abstract:First principles calculations have been performed to investigate the electronic properties of 1T′-MoS2 under uniaxial strain. Insulator–metal transition (IMT) occurs when 1T′-MoS2 is stretched uniaxially. For strain perpendicular to the zigzag chains of Mo atoms (ϵx), the critical strain for the IMT is 3.0%, while it reaches 4.8% for strain along the y direction. The IMT is due to the dropping of the state of the conduction band at the X point (CX) in the Brillouin zone, which is formed by the dx2−y2 orbitals of Mo atoms in the stretched Mo–Mo bonds and shows antibonding character. The x projection of the Mo–Mo bonds is rather larger than their y projection, leading to the much smaller critical ϵx for the IMT. In comparison with 1T′-MoS2 under biaxial strain (ϵbi), although the CX state drops more rapidly than that under x strain, the critical ϵbi is even larger than the critical ϵx, which is because the larger structural distortion under biaxial strain also induces great dropping of the valence band maximum. Moreover, uniaxial strain may be used for fine tuning of the critical electric field for the topological phase transition in 1T′-MoS2, which increases monotonically as a function of the strain.