Abstract:In this paper the effect of biaxial and uniaxial strain on the mobility of single-layer MoS$_{2}$ for temperatures T $>$ 100 K is investigated. Scattering from intrinsic phonon modes, remote phonon and charged impurities are considered along with static screening. Ab-initio simulations are utilized to investigate the strain induced effects on the electronic bandstructure and the linearized Boltzmann transport equation is used to evaluate the low-field mobility under various strain conditions. The results indicate that the mobility increases with tensile biaxial and tensile uniaxial strain along the armchair direction. Under compressive strain, however, the mobility exhibits a non-monotonic behavior when the strain magnitude is varied. In particular, with a relatively small compressive strain of 1% the mobility is reduced by about a factor of two compared to the unstrained condition, but with a larger compressive strain the mobility partly recovers such a degradation.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to study the influence of strain (including biaxial and uniaxial strain) on the low - field mobility of monolayer molybdenum disulfide (MoS₂). Specifically, the author focuses on how different types of scattering mechanisms (such as intrinsic phonons, remote phonons, and charged - impurity scattering) affect the electron - transport properties of monolayer MoS₂ under the action of strain at a temperature T > 100 K. Through first - principles simulations and the linearized Boltzmann transport equation (BTE), the author aims to evaluate the specific influence of strain on the mobility of monolayer MoS₂.
### Main problems:
1. **Influence of strain on the mobility of monolayer MoS₂**: The author studied how biaxial and uniaxial strain (especially uniaxial strain along the armchair direction) affect the mobility of monolayer MoS₂.
2. **Role of scattering mechanisms**: Considered scattering mechanisms such as intrinsic phonons, remote phonons, and charged impurities, and combined with the static screening effect to evaluate the changes of these scattering mechanisms under strain.
3. **Changes in energy - band structure**: Through first - principles calculations, studied the influence of strain on the electronic energy - band structure of monolayer MoS₂, especially the energy difference between the K - valley and the Q - valley and its influence on mobility.
### Key findings:
- **Tensile strain**: Tensile biaxial and uniaxial strain along the armchair direction can increase mobility. This is because tensile strain reduces the effective mass and increases the energy difference between the K - valley and the Q - valley, thereby reducing the inter - valley scattering rate.
- **Compressive strain**: The influence of compressive strain on mobility is more complex. A small compressive strain (such as 1%) will significantly reduce mobility, while a larger compressive strain will partially recover this decrease. In particular, under a larger compressive strain, the Q - valley becomes the lowest - energy valley, dominating the mobility behavior.
- **Influence of inter - valley scattering**: Tensile strain suppresses inter - valley scattering, while compressive strain enhances inter - valley scattering, which has a significant impact on mobility.
### Formula example:
- **Mobility calculation formula**:
\[
\mu(v)_A=\frac{J(v)_A}{F_A}=\mu(v)_{ll}\cos^2(\theta_v)+\mu(v)_{tt}\sin^2(\theta_v)+2\mu(v)_{lt}\sin(\theta_v)\cos(\theta_v)
\]
where \(\mu(v)_A\) is the mobility along the armchair direction, \(J(v)_A\) is the current component along the armchair direction, \(F_A\) is the electric field along the armchair direction, \(\theta_v\) is the direction angle of valley \(v\), and \(\mu(v)_{ll}\), \(\mu(v)_{tt}\), \(\mu(v)_{lt}\) are the longitudinal and transverse mobilities and the cross - term respectively.
Through these studies, the author provides a theoretical basis for the future design of MoS₂ - based electronic devices and shows the potential of strain engineering in regulating the electron - transport properties of MoS₂.