Synergistical Enhancement of Thermoelectric Properties in N‐type Bi2O2Se by Carrier Engineering and Hierarchical Microstructure
Xing Tan,Yaochun Liu,Rui Liu,Zhifang Zhou,Chan Liu,Jin-Le Lan,Qinghua Zhang,Yuan-Hua Lin,Ce-Wen Nan
DOI: https://doi.org/10.1002/aenm.201900354
IF: 27.8
2019-01-01
Advanced Energy Materials
Abstract:Oxygen-containing compounds are promising thermoelectric (TE) materials for their chemical and thermal stability. As compared with the high-performance p-type counterparts (e.g., ZT approximate to 1.5 for BiCuSeO), the enhancement of the TE performance of n-type oxygen-containing materials remains challenging due to their mediocre electrical conductivity and high thermal conductivity. Here, n-type layered Bi2O2Se is reported as a potential TE material, of which the thermal conductivity and electrical transport properties can be effectively tuned via carrier engineering and hierarchical microstructure. By selective modification of insulating [Bi2O2](2+) layers with Ta dopant, carrier concentration can be increased by four orders of magnitude (from 10(15) to 10(19) cm(-3)) while relatively high carrier mobility can be maintained, thus greatly enhancing the power factors (approximate to 451.5 mu W K-2 m(-1)). Meanwhile, the hierarchical microstructure can be induced by Ta doping, and the phonon scattering can be strengthened by atomic point defects, nanodots of 5-10 nm and grains of sub-micrometer level, which progressively suppresses the lattice thermal conductivity. Accordingly, the ZT value of Bi1.90Ta0.10O2Se reaches 0.36 at 773 K, a approximate to 350% improvement in comparison with that of the pristine Bi2O2Se. The average ZT value of 0.30 from 500 to 823 K is outstanding among n-type oxygen-containing TE materials. This work provides a desirable way for enhancing the ZT values in oxygen-containing compounds.