Abstract:In this work we focus on the simulation of radiation effects on silicon under proton irradiation at different scales. Two models of the Monte Carlo displacement damage calculation method in the Particle and Heavy Ion Transport code System (PHITS) were first used: the Torrens displacements per atom (NRT-DPA) model and a thermal recombination corrected dpa (arc-DPA), the prediction result of the final arc-DPA model is about 1/3 lower than the traditional NRT-DPA model; we also compared the difference between the two calculated values at the same dose of irradiation. When presenting a molecular dynamics study of the generation and evolution of silicon defects under irradiation, we simulated a 10 keV displacement cascade at room temperature. By post-processing the simulation results, the changes in the distribution and number of defects, as well as the evolution of defect clusters, were analyzed, where both the number of point defects and vacancy clusters show a tendency to increase and then decrease. Finally, first-principles were used to simulate and analyze the energy band structures , DOS, effective mass, the dielectric function, reflection and transmission spectra of silicon after introduction of defects. In order to obtain more accurate value of the bandgap, the HSE06 hybridization generalization is used so that the bandgap is not underestimated, while the clear bandgap facilitates fine analysis of the band structures of the defect states. We found that although the width of the energy band is reduced, which will lead to a increase of intrinsic carrier concentration. At the same time, the effective mass of the electron and hole are greatly reduced, which ultimately leads to a reduction of carrier mobility, and this will finally cause series of performance degradations.

Radiation effects in SiGe p-MODFETs grown on Silicon-on-Sapphire substrates

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes

Heavy-ion effects in SiC power MOSFETs with trench-gate design

Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultra-High Doses

Radiation Influence on Biaxial+Uniaxial Strained Silicon MuGFETs

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs

Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms

Proton Irradiation Effects on Dual Delta-Doped AlGaAs/InGaAs/AlGaAs Pseudomorphic High-Electron-Mobility Transistors

A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation

The Total-Dose-effects of Gamma and Proton Irradiations on High-Voltage Silicon–germanium Heterojunction Bipolar Transistors

Impact of Proton-Radiation-Induced Spacer Damage on the Dc Characteristics Degradation in Deep-Submicron Metal-Oxide-Semiconductor Field Effect Transistors

Investigation of total ionizing dose effects in 4H-SiC power MOSFET under gamma ray radiation

Irradiation effects of 25MeV silicon ions on SiGe heterojunction bipolar transistors

Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Effect of Double Insulators on the Performance Improvement of 3-MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs

Study of irradiation damage in silicon at different scales

Suppression of irradiation effect on electrical properties of silicon diodes by iron in p-silicon

Study of High-Energy Proton Irradiation Effects in Top-Gate Graphene Field-Effect Transistors