Abstract:We report a systematic and quantitative study of near-infrared intersubband absorption in strained AlGaN/GaN and lattice-matched AlInN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a function of Si-doping profile with and without delta doping. For AlGaN/GaN, we obtained good theoretical agreement with experimental measurements of transition energy, integrated absorbance and linewidth by considering many-body effects, interface roughness, and calculations of the transition lifetime that include dephasing. For the AlInN/GaN system, experimental measurements of the integrated absorbance due to the superlattice transitions produced values more than one order of magnitude lower than AlGaN/GaN heterostructures at similar doping levels. Furthermore, observed transition energies were roughly 150 meV higher than expected. The weak absorption and high transition energies measured in these structures is attributed to columnar alloy inhomogeneity in the AlInN barriers observed in high-angle annular dark-field scanning transmission electron microscopy. We simulated the effect of these inhomogeneities using three-dimensional band-structure calculations. The inhomogeneities were modeled as AlInN nanorods with radially varying In composition embedded in the barrier material of the superlattice. We show that inclusion of the nanorods leads to the depletion of the quantum wells (QWs) due to localization of charge carriers in high-In-containing regions. The higher energy of the intersubband transitions was attributed to the relatively uniform regions of the QWs surrounded by high Al (95%) composition barriers. The calculated transition energy assuming Al0.95In0.05N barriers was in good agreement with experimental results.

Optical isotropization of anisotropic wurtzite Al‐rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)n superlattices

Optical Polarization Characteristics of C-Plane InGaN/GaN Asymmetric Nanostructures

Enhancement of TE Polarized Light Extraction Efficiency in Nanoscale (aln)m/(gan)n(m>n) Superlattice Substitution for Al-rich AlGaN Disorder Alloy: Ultra-Thin GaN Layer Modulation

In-plane Anisotropic Photoluminescence of C-plane GaN under Asymmetric Biaxial Strain

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Layer disordering and doping compensation of an intersubband AlGaN/AlN superlattice by silicon implantation

In-Plane Optical Anisotropy In Asymmetric Si1-Xgex/Si/Si1-Ygey Superlattices

Strain Effect on Intersubband Transition in a GaN/AlGaN Single Quantum Well on Arbitrary Crystal Planes

Comparative Study Of Intersubband Absorption In Algan/Gan And Alinn/Gan Superlattices: Impact Of Material Inhomogeneities

Conduction-band engineering of polar nitride semiconductors with wurtzite ScAlN for near-infrared photonic devices

Optical Anisotropic Properties of M-Plane GaN Film Grown by Metalorganic Chemical Vapor Deposition

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Structural reconstruction and visible-light absorption versus internal electrostatic field in two-dimensional GaN-ZnO alloys.

Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN

Influence of Applied Electric Field on the Absorption Coefficient and Subband Distances in Asymmetrical AlN/GaN Coupled Double Quantum Wells

Characterization of Optical Properties and Thermo-Optic Effect for Non-Polar AlGaN Thin Films Using Spectroscopic Ellipsometry

Optical properties of BAlN and BGaN for applications in latticematched UV optical structures

Alloying strategy for two-dimensional GaN optical emitters

Dispersions of Quasi-Confined Optical Phonon Modes and Their Electron–phonon Interactions in an Asymmetric Wurtzite AlxGa1−xN / GaN / Aly Ga1−yN Quantum Well

Achieving atomically ordered GaN/AlN quantum heterostructures: The role of surface polarity

Significant Conductivity Enhancement in Al-rich N-Algan by Modulation Doping