Abstract:Recently, metallic nanoparticles decorated semiconductor nanowires, especially silicon, attract considerable attention, due to their potential applications in photocatalysis, photovoltaics, surface enhanced Raman scattering and biosensing. A common method that has been used to decorate silicon nanowires with metallic nanoparticles, e.g. Au or Pt, is galvanic displacement, in which metallic ions are reduced with electrons supplied by virtue of silicon half-cell reaction. Here we report a method to decorate silicon nanowires with Ag nanoparticles by surface reduction, in which a freshly etched silicon surface reduces Ag ions in-situ in aqueous silver nitrate solution. The as-grown Ag nanoparticles exhibit either highly single crystallinity or twinning boundaries, with most probably diameter similar to 25 nm (Figure 1). Raman mapping experiments suggest that 1(st) order Raman band of silicon nanowires exhibit uniform contrast along wire axis for pristine silicon nanowires, while for Ag nanoparticle decorated silicon nanowires a series of "hot-spot", i.e., substantially enhanced Raman scattering were discovered along the wire axis. This was explained by local electric field enhancement due to Ag nanoparticle "nano-antenna", which was supported by the correlation between atomic force microscopy (AFM) analysis and Raman mapping (Figure 2). The enhancement is more or less delocalized in Raman mapping due to diffraction limit in our far-field mapping experiments. In addition, we also noticed a new side band feature similar to 495 cm(-1) for nanowires appeared after HF etching, this new feature sustained after sequential Oxygen plasma and UV/ozone treatment which excluded the possibility due to any possible surface dangling bonds. We now suspect this feature is due to porosity resulted from HF etching and it is now being subjected to further investigations.

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