Abstract:The microstructure and electrical–optical properties of Al-doped ZnO (AZO) films have been studied as a function of H2 flux in the magnetron sputtering process at 150 °C and postannealing temperature in vacuum. As H2 flux increases in the sputtering gas, the AZO films deposited have a (002) preferred orientation rather than the mixed (100) and (002) orientations, the grain size shows a tendency to first increase then decrease, and (002) diffraction peak position is inclined to shift to higher angles first then to lower angles. The resistivity of the films first decreases then increases with H2 flux, and the lowest resistivity of 4.02 × 10−4 Ω cm is obtained at a H2 flux of 10 sccm. The average transmittance in the visible region shows little dependence on H2 flux. As a whole, the AZO films with higher values of figure of merit are obtained when the H2 flux is in the range of 6–12 sccm. The AZO films deposited in Ar and Ar + H2 exhibit different annealing behaviors. For the AZO film deposited in Ar, the grain size gradually increases, the stresses are relaxed, the resistivity first decreases then increases, and the average transmittance in the visible region is unchanged initially then somewhat decreased as annealing temperature is increased. The optimum annealing temperature for improving properties of AZO films deposited in Ar is 300 °C. For the AZO films deposited in Ar + H2, annealing does not significantly change the microstructure but increases the resistivity of the films; the average transmittance in the visible region remains unchanged initially but greatly reduced with further increase in annealing temperature. The carrier transport in the as-deposited and annealed films appears to be controlled by a mechanism of grain boundary scattering, and the value of Eg increases with the increase in carrier concentration due to Burstein–Moss effect.

Comparative study of thermal stability of aluminium- and gallium-doped ZnO thin films prepared by sol–gel method

Surface Topography and Optical Properties of Al-doped ZnO Thin Films by Sol-gel Process

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Microstructue and Optical Properties of Mg-doped ZnO Thin Films Prepared by Sol-gel Method

A study on the Al doping behavior with sol aging time and its effect on structural and optical properties of sol-gel prepared ZnO thin films

Effects of Annealing Temperature and Al Doping Concentration on the Optical Properties of ZnO Thin Films by Sol-Gel Technique

Effects of Annealing and Dopant Concentration on the Optical Characteristics of ZnO:Al Thin Films by Sol–gel Technique

Preparation and Characterization of Na-doped ZnO Thin Films by Sol–gel Method

Effect of annealing on photoluminescence of ZnO:Al thin films prepared by sol-gel method

Influence of Al Doping on the Properties of Zno Thin Films Grown by Atomic Layer Deposition

Highly transparent and conductive Ga-doped ZnO films with good thermal stability prepared by dual-target reactive sputtering

Property Research of ZnO:Al Thin Films with Different Proportion of Al3+ Doping

Effect of annealing on the structural, topographical and optical properties of sol gel derived ZnO and AZO thin films

Characteristics of Al-doped ZnO Thin Films Prepared in Ar + H2 Atmosphere and Their Vacuum Annealing Behavior

Preparation of highly transparent conductive Al-doped ZnO thin films and annealing effects on properties

Optical Properties of Al-doped ZnO Thin Films by Ellipsometry

Study on Microstructure and Electrical Properties of ZnO:Al Thin Films Prepared by Sol-gel Method

Doping and Annealing Effects on ZnO:Cd Thin Films by Sol–gel Method

Structural, electrical and optical properties of Gd doped and undoped ZnO:Al (ZAO) thin films prepared by RF magnetron sputtering

Study on Chemical Solution Deposition of Aluminum-Doped Zinc Oxide Films

Microstructure, Optical and Photoluminescence Properties of Ga-doped ZnO Films Prepared by Pulsed Laser Deposition