"Study On Assembly Method For Gaas Nanowires Device" (Vol 151, Pg 187, 2014)

Ke Xu,Jing Hou,Jian Liu,Mengxin Li,Kuan Huang,Yuanwei Qi
DOI: https://doi.org/10.1080/10584587.2014.926182
2014-01-01
Integrated Ferroelectrics
Abstract:The assembly and fabrication method for Gallium arsenide (GaAs) nanowires nano devices was implemented. Assembly of GaAs nanowires field effect transistor (FET) was realized by dielectrophoresis approach. Before deposition of the contacts, GaAs nanowires were treated wet etching in an ammonium polysulfide ((NH4)(2)S) solution to remove a surface oxide layer. The assembled devices were characterized by atomic force microscopy. The experimental results showed that the efficient assembly of GaAs nanowires was obtained when the applied alternating current voltage has a frequency of 1.5MHz and an amplitude of 10 V, and the success rate of ideal assembly for GaAs nanowires FET had been assessed. Meanwhile, it also provided an effective assembly method for other one-dimensional nanomaterials assembly of nano devices.
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