Design of an epi-thermal neutron flux intensity monitor with GaN wafer for boron neutron capture therapy

xingcai guan,masanobu manabe,isao murata,tieshan wang
DOI: https://doi.org/10.1080/00223131.2014.956831
IF: 1.126
2015-01-01
Journal of Nuclear Science and Technology
Abstract:Boron neutron capture therapy (BNCT) is a promising cancer therapy. Epi-thermal neutron (0.5eV < E-n < 10keV) flux intensity is one of the basic characteristics for modern BNCT. In this work, based on the Ga-71(n,gamma)Ga-72 reaction, a new simple monitor with gallium nitride (GaN) wafer as activation material was designed by Monte Carlo simulations to precisely measure the absolute integral flux intensity of epi-thermal neutrons especially for practical BNCT. In the monitor, a GaN wafer was positioned in the center of a polyethylene sphere as neutron moderator covered with cadmium (Cd) layer as thermal neutron absorber outside. The simulation results and related analysis indicated that the epi-thermal neutron flux intensity could be precisely measured by the presently designed monitor.
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