Preparation of silicon nanowires by in situ doping and their electrical properties

jindong wang,gen he,jinwen qin,lidong li,xuefeng guo
DOI: https://doi.org/10.1016/j.colsurfa.2014.03.028
2014-01-01
Abstract:•Silicon nanowires were synthesized via low pressure chemical vapor deposition with monodispersed Au catalyst particles.•The electrical characteristics after chemical etching revealed the radial dopant distribution in SiNWs.•This system provides a simple method to explore the dopant profile in SiNWs.
What problem does this paper attempt to address?