Abstract:In the past years, light-emitting devices (LEDs) based on erbium (Er)-doped insulators or wide-bandgap semiconductors have received intensive attention because the intra-4f transition (4I13/2→4I15/2) of Er3+ ions at ～ 1540 nm has potential applications in the optical interconnection for silicon-based circuits. The LEDs with rare-earth (RE)-doped SiOx (x ≤ 2) or SiNx (x ≤ 4/3) films have been well investigated as the silicon-compatible emitters. However, they suffer difficulty in injecting current and easing fatigue. In this context, the LEDs with RE-doped oxide semiconductors have been extensively investigated out of research interest in recent years. Among the oxide semiconductors, TiO2 is a desirable host for RE-doping because it is transparent for visible and infrared light, and cost-effective, and has considerably high RE solubility. In our previous work (Zhu C, Lü C Y, Gao Z F, Wang C X, Li D S, Ma X Y, Yang D R 2015 Appl. Phys. Lett. 107 131103), we have realized erbium (Er)-related visible and near-infrared (～ 1540 nm) electroluminescence (EL) from the LED with a structure of ITO/TiO2:Er/SiO2/n+-Si, in which TiO2:Er refers to the Er-doped TiO2 film as the light-emitting layer. In this work, we co-dope ytterbium (Yb) into the TiO2:Er film in the aforementioned LED to significantly enhance the Er-related visible and near-infrared EL. It is revealed that a certain amount of Yb co-doping enables the TiO2:Er film to transform its crystal phase from anatase to rutile. Such a phase transformation reduces the symmetry of crystal field surrounding the Er3+ ions incorporated into the TiO2 host. Moreover, the substitution of over-sized Yb3+ ions for Ti4+ ions in the TiO2 host leads to the distortion of the crystal field around the Er3+ ions. The aforementioned symmetry-reduction and distortion of the crystal field increase the probabilities of the intra-4f transitions of Er3+ ions. Due to the aforementioned reason, the Yb co-doping into the TiO2:Er film remarkably enhances the EL from the corresponding LED. It is believed that the strategy of Yb-codoping can be adopted to enhance the EL from the LEDs with other RE-doped TiO2 films.

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Multicolor and Near-Infrared Electroluminescence from the Light-Emitting Devices with Rare-Earth Doped Tio2 Films

Electroluminescence from Light-Emitting Devices Based on Erbium-Doped ZnO/n-Si Heterostructures: Enhancement Effect of Fluorine Co-Doping

Evolution From Random Lasing To Erbium-Related Electroluminescence From Metal-Insulator-Semiconductor Structured Light-Emitting Device With Erbium-Doped Zno Film On Silicon

Current Driving Er-Doped Electroluminescence Devices With Long-Term Reliability

Electroluminescence from Light-Emitting Devices with Erbium-Doped Tio2 Films: Enhancement Effect of Yttrium Codoping

Low-voltage Driven ∼1.54 Μm Electroluminescence from Erbium-Doped ZnO/p+-Si Heterostructured Devices: Energy Transfer from ZnO Host to Erbium Ions

Enhanced Electroluminescence from Silicon-Based Light-Emitting Devices with Mg0.4zn0.6o/Erbium-Doped Zno Heterostructures by Using Ito/Moo3 Combined Anode

Investigation of 4F-Related Electronic Transitions of Rare-Earth Doped ZnO Luminescent Materials: Insights from First-Principles Calculations

347 Nm Ultraviolet Electroluminescence from MgxZn1−xO-based Light Emitting Devices

Band Gap Engineering and Relationship with Luminescence in Rare-Earth Elements Doped ZnO: An Overview

Low Driving Voltage and High Reliability 1.54 Μm Electroluminescence from SnO2:Er/p-Si Heterostructured Devices Via Energy Transfer Effect

ZnO:Eu thin-films: Sol–gel derivation and strong photoluminescence from 5D0→7F0 transition of Eu3+ ions

Fairly Pure Ultraviolet Electroluminescence from Zno-Based Light-Emitting Devices

Electrophotoluminescence of Zno Film

Electroluminescence from light-emitting device with erbium-doped TiO2 film sputtered on p+-Si substrate: Enhancement effect of codoping zirconium

A Light Emitting Device with TiO2:Er3+/ZnO Heterostructure for Enhanced Near-Infrared Electroluminescence

Optical and Structural Characteristics of Rare Earth-Doped ZnO Nanocrystals Prepared in Colloidal Solution

Rapid synthesis of transparent Lu2O3:RE3+ (RE = Eu, Tb and Tm) thin-film scintillators with tunable RGB luminescence for the detection of X-ray

Engineering Tunable Broadband Near-Infrared Emission in Transparent Rare-Earth Doped Nanocrystals-in-Glass Composites via a Bottom-Up Strategy

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped ZnO Films: Strong Enhancement Effect of Titanium Codoping.