Abstract:International Journal of Modern Physics B, Ahead of Print. This study focuses on optimizing the synthesis conditions for the luminescent properties of ZnO:Er3[math], a key step toward improving its applicability in optoelectronics. X-ray diffraction (XRD) patterns at [math]C with Er3[math] dopant concentrations (1, 3 and 5[math]wt.%) show the preservation of the crystalline phase of ZnO, indicating that the dopants did not affect the structural integrity. Luminescence properties were observed in ZnO with 1[math]wt.% erbium doping at 900–[math]C, with the sample at [math]C exhibiting the highest emission peak at 533[math]nm. The optimal conditions for significant luminescence were identified at [math]C, with 5[math]wt.% Er3[math] showing the most pronounced effect. The practical implications of the achievement of optimal luminescence in ZnO:Er3[math] are profound for optoelectronics. These conditions are critical for efficient light-emitting devices, particularly in applications such as light-emitting diodes (LEDs) and lasers, where emission characteristics have a direct impact on performance. In addition, the enhanced luminescence holds great promise for sensors, especially in biomedical and environmental monitoring, as well as in quantum technologies. It contributes to the advancement of quantum sensors and quantum computing applications. This research provides a basis for tailoring the properties of ZnO:Er3[math] for specific applications by identifying optimal luminescence conditions at different dopant concentrations. While the identification of optimal conditions has been successful, further research is essential to unravel the underlying mechanisms at the atomic and molecular levels. Overcoming these challenges and exploring additional applications will be critical to realizing the practical impact of these findings in various technological fields, as the study paves the way for advances in optoelectronics, sensing, and quantum information processing.

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