Abstract:Publication date: 19 May 2023 Source: Key Engineering Materials Vol. 945 Author(s): Dong Yang, Stephan Wirths, Lars Knoll, Yi Han, Dan Mihai Buca, Qing Tai Zhao SiC gate-all-around (GAA) nanowire (NW) MOSFET is one of the most promising device architectures for the next generation of SiC power MOSFETs. This work reveals the great application potential of vertical SiC GAA NW power MOSFETs via TCAD simulation. The investigated devices show higher channel electron mobility (μch) and larger channel carrier density (nch) compared to the conventional SiC power MOSFET. Scaling down of NW diameter (DNW) is beneficial in terms of both, lowering channel resistance (Rch) via improving nch and, increasing breakdown voltage (Vb) by modifying electric field distribution. Low specific-on resistance (Ron,sp) of about 0.68 mΩ∙cm2 for 1 kV SiC MOSFET is shown as possible. However, scaling down the DNW below 100 nm causes an undesirable increase in Ron,sp due to the unscalable device area which is limited by the vertical gate wrapping stacks. The study on device scaling where the NW diameter (DNW) varies from 500 nm to 25 nm provides valuable design considerations for the device's performance. Finally, a top-down process has been developed for the device fabrication. Vertical SiC NWs with an aspect ratio of 10 are formed by an optimized micro-trench free dry etching process.

Realization of Ni Fully Silicided Gate on Vertical Silicon Nanowire MOSFETs for Adjusting Threshold Voltage $({V}_{T})$

Vertical Silicon Nanowire CMOS Inverter

Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs

CMOS compatible Gate-All-Around Vertical silicon-nanowire MOSFETs

Fully Gate-All-Around Silicon Nanowire Cmos Devices

Fabrication and Characterization of Poly-Si Vertical Nanowire Thin Film Transistor

Vertically Stacked and Independently Controlled Twin-Gate MOSFETs on a Single Si Nanowire

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Performance Breakthrough in Gate-All-Around Nanowire N- and P-Type MOSFETs Fabricated on Bulk Silicon Substrate

Vertical nanowire/nanosheet FETs with a horizontal channel for threshold voltage modulation

High-performance Fully Depleted Silicon Nanowire (diameter /spl Les/ 5 Nm) Gate-All-around CMOS Devices

Dual Nanowire Pmosfet With Thin Si Bridge And Tan Gate

Dual Nanowire Silicon MOSFET With Silicon Bridge and TaN Gate

High-performance silicon nanowire field-effect transistor with silicided contacts

Controlling Threshold Voltage of CMOS SOI Nanowire FETs with Sub-1 Nm Dipole Layers Formed by Atomic Layer Deposition

Vertical InAs Nanowire MOSFETs with ID<inf>S</inf> = 1.34 Ma/&#x00b5;m and G<inf>m</inf> = 1.19 Ms/&#x00b5;m at VD<inf>S</inf> = 0.5 V

Nickel-Silicided Schottky Junction CMOS Transistors With Gate-All-Around Nanowire Channels

Demonstration of Tunneling FETs Based on Highly Scalable Vertical Silicon Nanowires

Top-gated field effect devices using oxidized silicon nanowires

High-Performance Silicon Nanowire Gate-All-Around Nmosfets Fabricated on Bulk Substrate Using CMOS-Compatible Process

First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates