Crystal Structure and Microwave Dielectric Properties of an Ultralow‐Temperature‐Fired (agbi)0.5wo4 Ceramic

Di Zhou,Li-Xia Pang,Hui-Dong Xie,Jing Guo,Bin He,Ze-Ming Qi,Tao Shao,Xi Yao,Clive A. Randall
DOI: https://doi.org/10.1002/ejic.201300789
IF: 2.551
2013-01-01
European Journal of Inorganic Chemistry
Abstract:A new microwave dielectric (AgBi)0.5WO4 ceramic with an ultralow firing temperature was prepared by the solid-state reaction method. (AgBi)0.5WO4 can be obtained as a dense single-phase bulk material with a calcination temperature of 500 °C and sintering temperatures of ca. 580 °C. The material has a microwave relative permittivity of ca. 35.9, a Qf value of ca. 13000 GHz, and a negative temperature coefficient of –69 ppm/°C at 7.5 GHz. The crystal structure of (AgBi)0.5WO4 was determined by a combination of X-ray and transmission electron microscopy (TEM) diffraction analysis. The compound crystallizes in the monoclinic C12/m1 (no. 12) space group with the lattice parameters a = 10.1330(8) A, b = 11.0013(0) A, c = 7.2756(4) A, and β = 127.712(3)°. From an X-ray diffraction analysis, the (Ag0.5Bi0.5)WO4 ceramic reacts with silver after heat treatment at 560 °C to form new compounds, namely, Bi2WO6 and Ag2WO4. However, the (AgBi)0.5WO4 ceramic is chemically compatible with aluminum powder at 600 °C as an alternative cofired electrode material. All the results suggest that (AgBi)0.5WO4 ceramic is a promising new candidate material for ultralow-temperature cofired ceramic (ULTCC) technology.
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