Abstract:In this paper, we present an effective synthetic protocol to produce high quality InN nanocrystals using indium iodide (InI3), one member of the family of indium halides, as the indium source at a low temperature of <250 degrees C (far below the decomposition temperature of InN). Notably, reports on InN synthesized from indium halides are rare due to the lack of well-defined synthetic protocols. Here, indium iodide (InI3), with a stronger covalent ability, can also prevent the In3+ from being reduced to elemental indium, and then InN is formed. This synthetic protocol not only provides an alternative method to successfully synthesize high-quality InN, but is also useful to fabricate other functional materials by using stronger covalent reactants to prevent reduction/oxidation in the oxidation/reduction reaction process, respectively. Furthermore, we also report the first example of an orientation-attachment process occurring between the metal nitride particles. The high purity of the InN nanoparticles can be seen from the XPS and HRTEM results, showing the as-obtained products possess no obvious iodine or amorphous layers on the surface of particles, respectively. By controlling the parameters of reaction temperature and time, nanoparticles with different sizes were obtained as the final products. Raman and IR results indicate that our experimental data were consistent with the theoretical prediction and this gives further evidence that high quality InN nanocrystals were obtained. Moreover, it has been shown that the near-infrared band around 0.7 eV is characteristic of these samples and there were no obvious peaks around 1.9 eV, indicating that these InN nanocrystals exhibit a band gap of 0.7 eV, rather than the previously accepted 1.9 eV.

Elastic Properties of Indium Nitrides Grown on Sapphire Substrates Determined by Nano-Indentation: in Comparison with Other Nitrides

Optical Properties of InN Films Grown by MOCVD

Theoretical Study of the Initial Stage of Inn Growth on Cubic Zirconia (111) Substrates

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Dislocation and elastic strain in an InN film characterized by synchrotron radiation X-ray diffraction and Rutherford backscattering/channeling

Crystalline Quality of InxAl1-xN with Different Indium Contents Around Lattice-Matched to GaN

Indenter radius effect on mechanical response of a-(11–20), c-(0001), and m-(-1100) plane GaN single crystals in nanoindentation: A molecular dynamics study

Theoretical study of InN growth on Mn-stabilized zirconia (111) substrates

Indentation size effects in hardness of annealed NiB coatings

Study on Mechanical Properties of Single-Crystal Silicon Carbide by Nanoindentation

Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy

Growth and Characterization of Inn Thin Films on Sapphire by Mocvd

Effects of Indium Surfactant on the Crystalline and Optical Properties of GaN During Initial Growth Stage

Mechanical Properties and Nanoindentation Size Effects of YAG Crystals with Different Crystal Faces

Thermal Annealing of InN Films Grown by Metal–organic Chemical Vapor Deposition

Nanoindentation Mechanical Studies of Bulk AlN Single Crystals with Different Orientations

Study of High Indium InXGa1-XN Alloys with Synchrotron Radiation

Indium nitride from indium iodide at low temperatures: synthesis and their optical properties

Effect of peak load on the determination of hardness and Young's modulus of hot-pressed Si3N4 by nanoindentation

Influence of Strain on the Band Gap Energy of Wurtzite InN

First stages of the InP(1 0 0) surfaces nitridation studied by AES, EELS and EPES