Abstract:Ultrasonic wedge bonding of aluminum (Al) wires is a widely applied interconnect technology for power elec-tronic packaging. The joint quality of the wedge bonding is mainly affected by the process parameters and material properties. Inappropriate process parameters will lead to failure modes such as chip surface pit, metal layer peeling off, wire cracking, non-sticking to the pad, etc., which limits the long-term stability of power devices. In order to reach the desired reliability, the design of experiment (DoE) is generally deployed which is costly in terms of time and related materials. Therefore, simulation-assisted analysis is in demand to rapidly narrow down the process windows. In this paper, an ultrasonic bonding model involving thick Al wires (300 mu m) was established based on the Finite Element Method (FEM), to optimize process parameters effectively with reduced time and cost. The model was designed in ANSYS utilizing the transient structural mechanics module with various stresses and ultrasonic power, to simulate the relative deformation of the bonded wires and the displacement against the substrate. The result was then verified by ultrasonic wedge bonding samples with 9 sets of process parameters. The stress distributions were simulated and analyzed with the failure modes of tensile strength tests, while the deformation of wires under various process parameters was measured and compared with shear strength tests. Further, the relationship between the failure modes of the joint and the deformation was then analyzed by Response Surface Method (RSM), and the regression equation of the wire deformation and related process parameters was established and fitted with the actual sample's data. Such analysis not only found the optimum range of the deformation of thick Al ultrasonic wire bonds but also quickly provided a range of optimized processes for Al thick wires applying ultrasonic wedge bonding techniques.

Finite Element Analysis Of Influence Of Passivation Layer On Cu/Low-K Structure During Thermosonic Cu Wire Bonding

Influences of Material and Structural Factors on the Stress Conditions in Cu/low-k Chips During Cu Wire Bonding

Al-clad Cu Bond Wires for Power Electronics Packaging: Microstructure Evolution, Mechanical Performance, and Molecular Dynamics Simulation of Diffusion Behaviors

Simulation and Experimental Analysis of Thermomechanical Stress Around Interconnects for W2W Hybrid Bonding

Mechanical Issues of Cu-to-Cu Wire Bonding

Investigation of the mechanical characteristics of the Cu/low-k BEOL under wire bonding process loading

Effect of Superimposed Ultrasound on Mechanical Properties of Copper

Thermal Stress Analysis for the Low-k Dielectric Layers of Cu Interconnects in a 45 nm Chip

Substrate Stresses for double load copper wire bonding

Stress Analysis of Cu/low-k Interconnect Structure During Whole Cu-CMP Process Using Finite Element Method.

Finite element modeling and analysis of ultrasonic bonding process of thick aluminum wires for power electronic packaging

Finite element analysis of failure in Cu interconnect megasonic cleaning

Finite element analysis on ultrasonic propagation of interface bonding of bimetal composites

Non-continuous IMC in copper wirebonding: Key factor affecting the reliability

Modeling and Analysis of Transmission Performance of Bonding Wire Interconnection

A Comprehensive study of reliability improvement for 65nm Cu/Low-k process

The Stress Analysis and Parametric Studies for the Low-K Layers of a Chip in the Flip-Chip Process.

Finite Element Analysis of Structure Failure in Cu Interconnect Megasonic Cleaning

Thermal Finite Element Simulation of Ultrafine Pitch Chip-to-Wafer Hybrid Bonding

Unraveling diffusion behavior in Cu-to-Cu direct bonding with metal passivation layers

Influence of Wire Materials and Coating Thickness on Stress Conditions in Silicon Substrate During Copper Thermosonic Wire Bonding