Simulation Study of the Atomic Resolution Secondary Electron Imaging

Z. Ruan,M. Zhang,R. G. Zeng,Y. Ming,B. Da,S. F. Mao,Z. J. Ding
DOI: https://doi.org/10.1002/sia.5565
2014-01-01
Surface and Interface Analysis
Abstract:It has been experimentally achieved atomic resolution imaging by using secondary electron (SE) signals in a scanning transmission electron microscope with aberration correction. The underlying physical mechanism needs to be understood and has attracted considerable theoretical interest. Several recent calculations taking account of the inner‐shell ionization for high‐energy SE production have not included the cascade production of low‐energy SE signals which was believed to destroy the local information in SE imaging. In this work, we have developed a new theoretical method, a quantum Monte Carlo simulation, to calculate atomic resolution SE image by including every physical factor in SE generation, transportation and emission for a crystalline solid. This quantum Monte Carlo simulation method combines the Bohmian quantum trajectory method for treating electron elastic scattering and diffraction in a crystal with a conventional Monte Carlo sampling of inelastic scattering events along quantum trajectory paths. Simulation of atomic resolution SE image for atom columns in a copper crystal is performed. The contribution of the inner‐shell excitation to atomic resolution SE imaging is studied. Copyright © 2014 John Wiley & Sons, Ltd.
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