Abstract:Abstract High‐quality and polarity‐controlled III‐nitride is crucial for realizing high‐performance and new types of device designs with rich functionalities, but there are still many difficulties for obtaining N‐polar III‐nitrides till now. In this work, the van der Waals epitaxy of high‐quality N‐polar gallium nitride (GaN) is reported by innovatively inserting a thin MoS 2 layer. Due to the remission of thermal and lattice mismatch by the week van der Waals force in 2D MoS 2 insert layer, the N‐polar GaN exhibits high crystalline quality and reduced residual stress. The proposed atom deposition kinetics for the van der Waals epitaxy of the polarity‐controlled aluminium nitride nucleation layer and GaN epilayer on the MoS 2 lighten the great potentiality for the application of similar 2D materials. The ultraviolet photodetector based on N‐polar GaN possesses over seven times’ response higher than that of the Ga‐polar one, which is both beneficial from the high crystalline quality and efficient polarization electric field control of the N‐polar GaN. Present work provides a new strategy for the polarity control of high‐quality III‐nitrides by the van der Waals epitaxy with a novel 2D insert layer, which would be also extended in other optoelectronic and electronic devices.

Study of N-polar GaN Growth with a High Resistivity by Metal-Organic Chemical Vapor Deposition

The role of AlN thickness in MOCVD growth of N-polar GaN

Achievement of Polarity Reversion from Al(Ga)-polar to N-polar for AlGaN Film on AlN Seeding Layer Grown by a Novel Flow‐modulation Technology

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

High-resistance GaN Epilayers with Low Dislocation Density Via Growth Mode Modification

High-Resistivity Gan Homoepitaxial Layer Studied by Schottky Diode Structure

Low-temperature growth of high-quality a-plane GaN epitaxial films on lattice-matched LaAlO3 substrates

The van der Waals Epitaxy of High‐Quality N‐Polar Gallium Nitride for High‐Response Ultraviolet Photodetectors with Polarization Electric Field Modulation

Polarity control by inversion domain suppression in N-polar III-nitride heterostructures

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Optical Anisotropic Properties of M-Plane GaN Film Grown by Metalorganic Chemical Vapor Deposition

Impact of thick N-polar AlN growth on crystalline quality and electrical properties of N-polar GaN/AlGaN/AlN FET

Controlling a three dimensional electron slab of graded Al$_{x}$Ga$_{1-x}$N

Realization of low specific-contact-resistance on N-polar GaN surface using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique

Recent Progress in Metal-Organic Chemical Vapor Deposition of (000(1)Over-Bar) N-Polar Group-Iii Nitrides

N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation

Spontaneous nucleation and growth of GaN nanowires: Fundamental role of crystal polarity

Study of (112̄0) non polar a-plane GaN on the (11-02) r-plane sapphire

Non-polar M-Plane GaN Film and Polarized InGaN/GaN LED Grown on LiAlO 2 (001) Substrates

Suppressing the zincblende-phase inclusions in nitrogen-polar wurtzite-phase InGaN films by pulsed metalorganic chemical vapor deposition