Abstract:As the device size continues to shrink, the gate oxygen layer in MOS devices continues to become thinner, which leads to problems such as increased leakage current in conventional Si MOS devices. SiC, an important semiconductor material used in high-power devices, is not immune to the problem of premature breakdown due to the gate oxygen layer. Based on this, this paper adopts the innovative approach of replacing the conventional SiO 2 as the gate oxygen layer with the high-k material, hafnium dioxide (HfO 2 ), and continues the in-depth study on the electrical characteristics of the gate oxygen structure. In this paper, hafnium dioxide (HfO 2 ) thin films were deposited on SiC and Si substrates using the atomic layer deposition(ALD) method. The metal-insulated semiconductor (MIS) structures with Al as the upper and lower electrodes were prepared, and the leakage currents and breakdown voltage characteristics of the MOS capacitors on the two different substrates were investigated. The leakage current density of the MOS capacitor structure with SiC substrate is 10 -11 A/cm 2 ,and the breakdown voltage is about 32 V. Based on the capacitance-voltage (C-V) measurements, the frequency dependence of the movable charge at the interface of the MOS capacitor structure is investigated. The lowest interfacial defect density (D it ) of the MOS capacitive structure with SiC substrate is only of the order of 10 10 eV -1 cm -2 , while the movable charge N eff of the oxide layer of this sample is also controlled to the order of 10 13 cm -2 . It is worth mentioning that the HfO 2 /SiC structure performs better than the HfO 2 /Si structure in these electrical parameters, and the sample designed in this paper also performs better in electrical parameters than previous studies. These results undoubtedly demonstrate that the combination of High-k material (HfO 2 ) and SiC in the MOS gate oxygen layer is a promising research topic.

The Interfacial Quality of HfO[sub 2] on Silicon with Different Thicknesses of the Chemical Oxide Interfacial Layer

Effect of the Chemical Oxide Layer Thickness on the Interfacial Quality of Ald-Grown Hfo2 on Silicon

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Atomic Layer Deposition of High Quality HfO2 Using In-Situ Formed Hydrophilic Oxide As an Interfacial Layer

Interfacial Structure and Electrical Properties of Ultrathin HfO2dielectric Films on Si Substrates by Surface Sol–gel Method

Interfacial and Electrical Characterization of HfO2/Al2O3/InAlAs Structures

Electrical Characterization of HfO2/4H-SiC and HfO2/Si MOS Structures

Importance of tailoring the thickness of SiO2 interlayer in the observation of ferroelectric characteristics in yttrium doped HfO2 films on silicon

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation

Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3

The Evolution of the Hfsiox/Si Interface along with the Increase of Forming Gas Annealing Temperature

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Properties of HfLaO MOS Capacitor Deposited on SOI with Plasma Enhanced Atomic Layer Deposition

Characteristics of Sandwich-Structured Al2O3/HfO2/Al2O3 Gate Dielectric Films on Ultra-Thin Silicon-on-insulator Substrates

Plasma Enhanced Atomic Layer Deposition of HfO2 with in Situ Plasma Treatment

Interface Engineering for Performance and Reliability Optimization of Hf0.5Zr0.5O2 FeFETs: Device Integration and Electrical Characterization

Electronic Properties of Atomic Layer Deposited HfO2 Thin Films on InGaAs Compared to HfO2/GaAs Semiconductors

Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods

Fabrication and Characterization of Pulsed Laser Deposited Hfo2 Films for High-K Gate Dielectric Applications