Thermoelectric Properties of I-doped Bi2Te2.85Se0.15 Solid Solutions

Go-Eun Lee,Il-Ho Kim,Young Soo Lim,Won-Seon Seo,Byeong-Jun Choi,Chang-Won Hwang
DOI: https://doi.org/10.3938/jkps.64.1692
2014-01-01
Journal of the Korean Physical Society
Abstract:I-doped Bi 2 Te 2.85 Se 0.15 solid solutions were prepared by encapsulated melting and hot pressing. The electrical conductivity and the electronic thermal conductivity were increased due to an increase in the carrier concentration with increasing I content, but the lattice thermal conductivity was reduced because I atoms affected the lattice disorder, with I atoms acting as phonon scattering centers. The undoped solid solution showed a carrier concentration of 7.37 × 10 19 cm −3 , a power factor of 2.1 mWm −1 K −2 and a dimensionless figure of merit (ZT) of 0.56 at 323 K. The ZT value was improved due to an increase in the power factor by I doping, and the maximum ZT was obtained as 0.90 at 423 K for Bi 2 Te 2.85 Se 0.15 :I 0.005 .
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