Abstract:Because n-type Bi2Te3-based materials exhibit lower thermoelectric performance than p-type materials and because their thermoelectric properties are sensitively changed by the composition and carrier concentration, optimizing these aspects in n-type materials is necessary to improve the thermoelectric figure of merit (ZT). In this study, the thermoelectric performance of n-type Bi2Te3-based materials was improved by reducing thermal conductivity through the formation of a Bi2Te3-Bi2Se3 solid solution, Bi2Te3-ySey and optimizing the carrier concentration through doping. As the amount of Se increased in Bi2Te3-ySey, the carrier concentration decreased, resulting in decreased electrical and thermal conductivities and increased Seebeck coefficients. As a result, Bi2Te2.85Se0.15 exhibited ZT = 0.56 at 323 K, and Bi2Te2.4Se0.6 exhibited ZT = 0.60 at 423 K. Among the Bi2Te3-ySey solid solutions, the doping effect was investigated for Bi2Te2.85Se0.15 and Bi2Te2.7Se0.3, which recorded excellent thermoelectric performance at low temperatures. When halogen element (I) was doped, the power factor improved owing to the increase in carrier concentration, and the thermal conductivity decreased. As a result, the ZT values were greatly enhanced to ZT = 0.90 at 423 K for Bi2Te2.85Se0.15:I0.005 and ZT = 1.13 at 423 K for Bi2Te2.7Se0.3:I0.0075. When the transition elements (Cu and Ag) were doped, the power factor was improved by the increase in Seebeck coefficient, and thereby Bi2Te2.85Se0.15:Ag0.01 and Bi2Te2.85Se0.15:Ag0.01 exhibited ZT = 0.76 and ZT = 0.75 at 323 K, respectively, and Bi2Te2.7Se0.3:Cu0.01 exhibited ZT = 0.73 at 423 K. Conversely, doping with other transition elements (Ni and Zn), as well as group-III (Al and In) and group-IV (Ge and Sn) elements, resulted in power factors and thermal conductivities that were similar to or slightly less than those of undoped Bi2Te2.85Se0.15, leading to minimal or no improvement in ZT. Next, n-type Bi2Te2.85Se0.15:I0.005 and Bi2Te2.7Se0.3:I0.0075, which exhibited the best thermoelectric performances, were fabricated as bulky compacts, and the uniformity of their thermoelectric properties were evaluated.

Preparation and Thermoelectric Properties of N -Type Bi 2 Te 2.7 Se 0.3 :D M

Preparation and Thermoelectric Properties of Doped Bi 2 Te 3 -Bi 2 Se 3 Solid Solutions

Preparation and thermoelectric properties of iodine-doped Bi2Te3-Bi2Se3 solid solutions

Uniformity of Thermoelectric Properties of N-type Bi<sub>2</sub>Te<sub>3-y</sub>Se<sub>y</sub> Bulky Compacts

Preparation and Thermoelectric Properties of Bi 2 Te 3 -Bi 2 Se 3 Solid Solutions

Thermoelectric Properties of I-doped Bi2Te2.85Se0.15 Solid Solutions

Preparation and thermoelectric properties of Bi2Te3-Bi2Se3 solid solutions

Tunable Electrical Conductivity and Simultaneously Enhanced Thermoelectric and Mechanical Properties in n-type Bi<sub>2</sub>Te<sub>3</sub>

Bismuth telluride compounds with high thermoelectric figures of merit

Tunable Electrical Conductivity and Simultaneously Enhanced Thermoelectric and Mechanical Properties in n‐type Bi2Te3

Optimization of Thermoelectric Property of n‐Type Mg3Sb2 Near Room Temperature via Mn&Se Co‐Doping

Isotropic Thermoelectric Performance of Layer-Structured n-Type Bi2Te2.7Se0.3 by Cu Doping

Thermoelectric properties of Bi 2 Te 3 -Bi 2 Se 3 solid solutions prepared by attrition milling and hot pressing

Isotropic Thermoelectric Performance of Layer-Structured n-Type Bi 2 Te 2.7 Se 0.3 by Cu Doping

Enhanced Near-Room Temperature Thermoelectric Performance and Mechanical Strength of N-Type BiTeSe Materials Incorporated with Ag2Se Inclusions

Modulation Doping Enables Ultrahigh Power Factor and Thermoelectric ZT in n‐Type Bi 2 Te 2.7 Se 0.3

Synergistic Improvement of BiI3 and In on Thermoelectric Properties of Zone-Melted n-Type Bi2Te2.7Se0.3

Enhanced Thermoelectric Performance of N-Type Bi2(Se, Te)3 Bulk Nanocomposites Through Ti Doping

High Thermoelectric Performance in Cu-Doped Bi 2 Te 2.7 Se 0.33 Due to Cl Doping and Multiscale AgBiSe 2

Thermoelectric Performance of Mg2.2(Ge0.9Sn0.1) Ternary Solid Solution Doped with Ag, Bi, Ni and Sb

Experimental Studies on Anisotropic Thermoelectric Properties and Structures of N-Type Bi2Te2.7Se0.3.