Abstract:Low-temperature epitaxy of ZnO films was carried out on both Si(001) and silica substrates by reactive e-beam evaporation. Growth temperature was varied between 100°C and 450°C. The optimal growth temperatures were between 200°C and 300°C for Si(001) substrates and 300°C and 350°C for silica, respectively. Structural and optical characteristics grown on both of Si and silica were compared by measurements of X-ray diffraction, Raman scattering and photoluminescence excitation (PLE) spectroscopy. X-ray diffraction showed the ZnO films grown both on Si(001) and silica substrates were all highly c-axis-oriented and their linewidth of (002) diffraction peak is significantly smaller than that measured from ZnO films deposited by magnetron sputtering. However, Raman scattering demonstrated the presence of excess zinc in the ZnO/silica structure. PLE measurements exhibited the sharp band-absorption edge and exciton absorption in the ZnO films on Si(001) and poor optical properties of ZnO on silica. PLE also revealed that the absorption characteristic near the band edge remarkably changed with the variation of oxygen content in the ZnO lattice while X-ray diffraction showed that the crystalline structures of ZnO films grown under different O2 pressure almost remained unchanged. The underlying mechanism of low-temperature epitaxy of high-quality ZnO films and its applications in electronic and optoelectronic devices are discussed.

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Growth of high-quality ZnO thin films on (11\bar{2}0) a-plane sapphire substrates by plasma-assisted molecular beam epitaxy

MOCVD growth and properties of ZnO and Zn1-xMgxO films

Structural and Optical Studies of Mg(X)Zn(1-X)Ofilms Grown on Sapphire

Growth of High-Quality ZnO Thin Films on ( 112̅0 ) A-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

Low-temperature epitaxy of ZnO films on Si(0 0 1) and silica by reactive e-beam evaporation

Epitaxial growth and luminescence properties of ZnO-based heterojunction light-emitting diode on Si(1 1 1) substrate by pulsed-laser deposition

Epitaxial growth and luminescence properties of ZnO-based heterojunction light-emitting diode on Si(1 1 1) substrate by pulsed-laser deposition

Structural Properties And Enhanced Bandgap Tunability Of Quaternary Cdznos Epitaxial Films Grown By Pulsed Laser Deposition

Stable p‐type ZnO thin films on sapphire and n‐type 4H‐SiC achieved by controlling oxygen pressure using radical‐source laser molecular beam epitaxy

Structural and Optical Properties of Nonpolar $(11 \bar{2}0)$ ZnO Films Grown by Plasma-Assisted Molecular-Beam Epitaxy

Growth of Non-Polar A-Plane Zn1−Cd O Films by Pulsed Laser Deposition

Band Gap Modulation of ZnCdO Alloy Thin Films with Different Cd Contents Grown by Pulsed Laser Deposition

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Structural and Photoluminesenct Properties of Zn1-xMgxO Thin Film on Silicon

Fabrication of P-Type ZnMgO Films Via Pulsed Laser Deposition Method by Using Li As Dopant Source

Epitaxial Zn1−Mg O Films Grown on (1 1 1) Si by Pulsed Laser Deposition

p-(001)NiO/n-(0001)ZnO heterostructures grown by pulsed laser deposition technique

Glancing-incidence X-ray Analysis of ZnO Thin Films and ZnO/ZnMgO Heterostructures Grown by Laser-Mbe

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Growth of high quality Zn0.9Mg0.1O films on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy