Abstract:AC positive bias temperature instability (PBTI) of germanium nMOSFETs with GeO2/Ge and Si-cap/Ge gate stack was investigated in this brief. AC-DC-AC alternating PBTI stress tests were conducted on both types of devices, the experiment data shows the inserted DC stress phase has little impact on the following AC stress kinetics on GeO2/Ge nMOSFETs but introduce a significant “additional DC generation” on Si-cap/Ge devices. The “additional DC generation” is ascribed to the existence of energy alternating defects (EAD) according to previous studies. Energy distribution under DC and AC stress further demonstrate that EAD are significant on Si-cap/Ge but negligible on GeO2/Ge devices. Effective lifetime prediction is carried out and compared under DC stress after discharge (with a purposely introduced measurement delay) and AC stress on both GeO2/Ge and Si-cap nMOSFETs. The results show GeO2/Ge nMOSFETs’ effective lifetime exhibits no difference under two stress modes, while Si-cap/Ge nMOSFETs’ effective lifetime is underestimated using DC stress after discharge approximation without considering the EAD-induced “additional DC generation”. An extra 0.14V 10-year Vdd design margin can be obtained for Si-cap/Ge nMOSFETs to gain higher performance by taking “additional DC generation” into account. The conclusion is beneficial for process optimization and PBTI reliability improvement of Ge nMOSFETs.

AC NBTI of Ge Pmosfets: Impact of Energy Alternating Defects on Lifetime Prediction

NBTI of Ge Pmosfets: Understanding Defects and Enabling Lifetime Prediction

Defects and Lifetime Prediction for Ge Pmosfets under Ac Nbti Stresses

A Comparative Study of AC Positive Bias Temperature Instability of Germanium Nmosfets with GeO₂/Ge and Si-cap/Ge Gate Stack

Systematic Study on Predicting the Lifetime of Si pMOSFETs During NBTI Stress Based on Low-Frequency Noise.

A Comparative Study of Defect Energy Distribution and Its Impact on Degradation Kinetics in GeO 2 /ge and SiON/Si Pmosfets

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters

Characterization of Negative-Bias Temperature Instability of Ge MOSFETs with ${\rm GeO}_{2}/{\rm Al}_{2}{\rm O}_{3}$ Stack

GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency Model

New Observations on AC NBTI Induced Dynamic Variability in Scaled High-Κ/metal-gate MOSFETs: Characterization, Origin of Frequency Dependence, and Impacts on Circuits

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

Issues And Controversies In Nbti Degradation And Recovery Mechanisms For P-Mosfets With Sion Gate Dielectrics

NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and Modeling

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

Understanding lifetime prediction methodology for In<inf>0.53</inf>Ga<inf>0.47</inf>As nFETs under Positive Bias Temperature Instability (PBTI) condition

New insights into AC RTN in scaled high-к / metal-gate MOSFETs under digital circuit operations