Abstract:Colloidal germanium (Ge) nanocrystals (NCs) are of great interest with possible applications for photovoltaics and near-IR detectors. In many examples of colloidal reactions, Ge(II) precursors are employed, and NCs of diameter ∼3-10 nm have been prepared. Herein, we employed a two-step microwave-assisted reduction of GeI4 in oleylamine (OAm) to prepare monodispersed Ge NCs with a size of 18.9 ± 1.84 nm. More importantly, the as-synthesized Ge NCs showed high crystallinity with single-crystal nature as indicated by powder X-ray diffraction, selected area electron diffraction, and high-resolution transmission electron microscopy. The Tauc plot derived from photothermal deflection spectroscopy measurement on Ge NCs thin films shows a decreased bandgap of the Ge NCs obtained from GeI4 compared with that of the Ge NCs from GeI2 with a similar particle size, indicating a higher crystallinity of the samples prepared with the two-step reaction from GeI4. The calculated Urbach energy indicates less disorder in the larger NCs. This disorder might correlate with the fraction of surface states associated with decreased particle size or with the increased molar ratio of ligands to germanium. Solutions involved in this two-step reaction were investigated with 1H NMR spectroscopy and high-resolution mass spectrometry (MS). One possible reaction pathway is proposed to unveil the details of the reaction involving GeI4 and OAm. Overall, this two-step synthesis produces high-quality Ge NCs and provides new insight on nanoparticle synthesis of covalently bonding semiconductors.

Formation and characterization of varied size germanium nanocrystals by electron microscopy, Raman spectroscopy, and photoluminescence

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Photoluminescence of Ge Nanoparticles Embedded in Sio2 Glasses Fabricated by A Sol-Gel Method

Raman scattering and room-temperature visible photoluminescence from Ge nanocrystals embedded in SiO2 thin films

Formation Of Ge Nanocrystals Embedded In A Sio2 Matrix: Transmission Electron Microscopy, X-Ray Absorption, And Optical Studies

Sol−Gel Preparation and Photoluminescence of Size Controlled Germanium Nanoparticles Embedded in a SiO<sub>2</sub>Matrix

Estimation of crystal-size of nc-Ge by Raman scattering spectra

Single-Crystalline Germanium Nanocrystals via a Two-Step Microwave-Assisted Colloidal Synthesis from GeI4

The Formation of Ge Nanocrystals in a Metal–insulator–semiconductor Structure and Its Memory Effect

Optical properties of Ge/Si quantum dot superlattices

Formation Mechanism of Ge Nanocrystals Embedded in SiO2studied by Fluorescence X-Ray Absorption Fine Structure

Synthesis and Optical Properties of Germanium Nanorod Array Fabricated on Porous Anodic Alumina and Si-Based Templates

Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered Gesio Ternary Precursor

Near-infrared photoluminescence in germanium oxide enclosed germanium nano- and micro-crystals.

THE COMPLEXITY OF THE GROWTH AND OPTICAL PROPERTIES OF GERMANIUM NANOCLUSTERS

EFFECT OF LASER ON FORMATION OF Ge NANOCRYSTALS EMBEDDED IN SiO 2

Germanium crystals on silicon show their light

Synthesis of Germanium Nanocrystals and Its Possible Application in Memory Devices

Size-independent low-frequency Raman scattering in Ge-nanocrystal-embedded SiO_2 films