Monolithic multistage optical switch operating at 160 Gb/s line rate

A. Albores-Mejia,Kevin A. Williams,Fausto Gomez-Agis,S. Zhang,H.J.S. Dorren,Xaveer Leijtens,T. de Vries,Y.S. Oei,Martijn J. R. Heck,LM Luc Augustin,R Richard Nötzel,D.J. Robbins,MK Meint Smit
DOI: https://doi.org/10.1109/cleoe-eqec.2009.5191728
2009-01-01
Electronics Letters
Abstract:A four input, four output multi-stage optoelectronic switching circuit is implemented on an active-passive regrown InGaAsP/InP epitaxial wafer [1]. The circuit incorporates shallow low-loss waveguides and waveguide crossings in combination with deeply-etched low-radius (0.1mm) waveguide bends and multimode interference couplers to enable very high density circuit design. Amplifier gates are implemented within the multi-quantum wells active regions which have been designed for a gain peak at 1550nm. These are separately addressed to enable the reconfigurable routing through the switching circuit. Figure 1a shows a microscope photograph of the fabricated and wire bonded circuit.
What problem does this paper attempt to address?