Abstract:Crystalline silicon, including Czochralski silicon (Cz-Si) and multicrystalline silicon (mc-Si),is main material for photovoltaic (PV) industry. How to produce more productive and less expensive crystalline silicon materials is still a big challenge. As we know, the seed-assisted growth method can be used to fabricate cast-mono (CM-Si) silicon by directional solidification, which should combine the both advantages of Cz-Si and mc-Si. However, there remain some problems to be resolved in growing CM-Si silicon ingots, particularly the control of dislocations which are the major and most detrimental defects in CM-Si. They can act as precipitation sites for impurities and thus reduce the carrier lifetime in ingots. Unlike mc-Si ingots, once dislocations are generated in the bottom of CM-Si ingots, they will glide and propagate along the growth direction without hindrance due to the lack of grain boundaries. In this presentation, we review our recent work of how to control defects, specially dislocations, in CM-Si. We induce a grain boundary by adjusting the orientation of seeds which can suppress the generation of dislocations originated from the junction of seeds. We have investigated the effect of Σ5, Σ13a grain boundary relationship at seed junctions of <100>-oriented CM-Si on dislocations and solar cell performance. We also use <110>-oriented seeds to grow new orientation CM-Si ingots to control the generation and propagation of dislocations. The results show that by designing the orientation of seeds, the dislocation density can be decreased and the solar cell efficiency can be improved obviously.

Simulation Analysis of Point Defects in Silicon Ingot During Unidirectional Solidification Process for Solar Cells

Simulation analysis of point defects in a silicon ingot during a unidirectional solidification process for solar cells

Gedanken experiment on point defects in unidirectional solidified single crystalline silicon with no dislocations

Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot

Study on thermal stress in a silicon ingot during a unidirectional solidification process

Three-dimensional global analysis of thermal stress and dislocations in a silicon ingot during a unidirectional solidification process with a square crucible

MD Simulation and Transport Property Analysis of Silicon in High-Temperature Molten Fluoride Salts Electrolyte

Heat and Impurity Transfer Mechanisms of Czochralski and Directional Solidification Processes

Influence of Crystal Growth Rate on the Thermal Field in a Directional Solidification Process for Silicon Solar Cells

Structure Characteristic and Defects Controlling in Cold Crucible Directional Solidification of Multicrystalline Silicon for Solar cells

Effect of melt flow on impurity distribution in directional solidification of silicon solar cells

Numerical simulation of thermal stress distribution in a solidified silicon ingot for solar cells

Experimental Study Of 3d Solid-Liquid Interfaces And Their Influence On Directional Solidification Silicon Ingot

Impact of Thermal Stress on Intrinsic Point Defect in Czochralski Crystal Growth: Developing a Quantitative Model for Defect Formation and Distribution

3D Numerical Analysis of the Influence of Material Property of A Crucible on Stress and Dislocation in Multicrystalline Silicon for Solar Cells

(Invited) Defects in Cast-Mono Crystalline Silicon

Distribution and propagation of dislocation defects in quasi-single crystalline silicon ingots cast by the directional solidification method

Simulation of the Void Shape Evolution of High-Temperature Annealed Silicon Structures by means of a Custom Level-Set Formulation

Simulation for microstructure evolution of Al-Si alloys in solidification process

Influence of Temperature Gradient at Interface on Defect Multiplication in Seed-Assisted Multicrystalline Silicon

Modeling and Simulation of Si Crystal Growth from Melt