Heat and Impurity Transfer Mechanisms of Czochralski and Directional Solidification Processes

Koichi Kakimoto,Xuejiang Chen,L. J. Liu,H. Miyazawa,Hitoshi Matsuo,Satoshi Nakano,Sho Hisamatsu,Yoshihiro Kangawa
DOI: https://doi.org/10.1149/1.3096556
2009-01-01
ECS Transactions
Abstract:In this paper, results of global computation in a three-dimensional configuration for transverse magnetic field-applied Czochralski method to study distributions of temperature and impurity concentration are presented. The analysis includes a re-melting and segregation model at an interface between a crystal and the melt. Deflection of an interface between a crystal and the melt is also taken into account. Time-dependent global analysis of the solidification process of a silicon ingot for photovoltaic is described in this paper. This model includes distributions of dislocation, impurity and point defects for a quasi-single silicon ingot grown by the solidification method. Heat and mass transfers in a square crucible are also discussed.
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