Abstract:Crystalline silicon, including Czochralski silicon (Cz-Si) and multicrystalline silicon (mc-Si),is main material for photovoltaic (PV) industry. How to produce more productive and less expensive crystalline silicon materials is still a big challenge. As we know, the seed-assisted growth method can be used to fabricate cast-mono (CM-Si) silicon by directional solidification, which should combine the both advantages of Cz-Si and mc-Si. However, there remain some problems to be resolved in growing CM-Si silicon ingots, particularly the control of dislocations which are the major and most detrimental defects in CM-Si. They can act as precipitation sites for impurities and thus reduce the carrier lifetime in ingots. Unlike mc-Si ingots, once dislocations are generated in the bottom of CM-Si ingots, they will glide and propagate along the growth direction without hindrance due to the lack of grain boundaries. In this presentation, we review our recent work of how to control defects, specially dislocations, in CM-Si. We induce a grain boundary by adjusting the orientation of seeds which can suppress the generation of dislocations originated from the junction of seeds. We have investigated the effect of Σ5, Σ13a grain boundary relationship at seed junctions of <100>-oriented CM-Si on dislocations and solar cell performance. We also use <110>-oriented seeds to grow new orientation CM-Si ingots to control the generation and propagation of dislocations. The results show that by designing the orientation of seeds, the dislocation density can be decreased and the solar cell efficiency can be improved obviously.

3D Numerical Analysis of the Influence of Material Property of A Crucible on Stress and Dislocation in Multicrystalline Silicon for Solar Cells

Three-dimensional global analysis of thermal stress and dislocations in a silicon ingot during a unidirectional solidification process with a square crucible

Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot

Numerical simulation of thermal stress distribution in a solidified silicon ingot for solar cells

Numerical analysis of cooling rate dependence on dislocation density in multicrystalline silicon for solar cells

Study on thermal stress in a silicon ingot during a unidirectional solidification process

Numerical Analysis of the Dislocation Density in Multicrystalline Silicon for Solar Cells by the Vertical Bridgman Process

Numerical Study Of Von Mises Stress During Continuous Casting Of Multicrystalline Silicon With Large-Size Grains

Heat and Impurity Transfer Mechanisms of Czochralski and Directional Solidification Processes

Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method

(Invited) Defects in Cast-Mono Crystalline Silicon

Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

Simulation analysis of point defects in a silicon ingot during a unidirectional solidification process for solar cells

Effect of Silicon Nitride Coated Carbon Crucible on Multi-Crystalline Silicon Ingot during Directional Solidification Process: Numerical Simulation

Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

Influence of Crystal Growth Rate on the Thermal Field in a Directional Solidification Process for Silicon Solar Cells

Structure Characteristic and Defects Controlling in Cold Crucible Directional Solidification of Multicrystalline Silicon for Solar cells

Simulation Analysis of Point Defects in Silicon Ingot During Unidirectional Solidification Process for Solar Cells

The dislocation distribution characteristics of a multi-crystalline silicon ingot and its impact on the cell efficiency

Effect of Heat Transfer During the Vacuum Directional Solidification Process on the Crystal Quality of Multicrystalline Silicon

Numerical and experimental investigation of octagonal thermal field for improving multi-crystalline silicon ingot quality