Abstract:Impacts of source/drain (S/D) recess engineering on the device performance of both the gate-all-around (GAA) nanosheet (NS) field-effect transistor (FET) and FinFET have been comprehensively studied at 5 nm node technology. TCAD simulation results show that the device off-leakage, including subthreshold leakage through the channel (Isub) and punch-through leakage (IPT) in the sub-channel, is strongly related to the S/D recess process. Firstly, device electrical characteristics such as current density distributions, On/Off-state current (Ion, Ioff), subthreshold swing (SS), RC delay, and gate capacitance (Cgg) are investigated quantitatively for DC/AC performance evaluation and comparison according to S/D lateral recess depth (Lrcs) variations. For both device types, larger Lrcs will result in a shorter effective channel length (Leff), so that the Ion and Ioff simultaneously increase. At the constant Ioff, the Lrcs can be optimized to enhance the device’s drivability by ~3% and improve the device’s RC delay by ~1.5% due to a larger Cgg as a penalty. Secondly, S/D over recess depth (Hrcs) in the vertical direction severely affects the punch-through leakage in the Sub-Fin or bottom parasitic channel region. The NSFET exhibits less Ioff sensitivity provided that it can be well controlled under 12 nm since the bottom parasitic channel is still gated. Furthermore, with both Hrcs and Lrcs accounted for in the device fabrication, the NSFET still shows better control of the off-leakage in the intrinsic and bottom parasitic channel regions and ~37% leakage reduction compared with FinFETs, which would be critical to enable further scaling and the low standby power application. Finally, the S/D recess engineering strategy has been given: a certain lateral recess could be optimized to obtain the best drive current and RC delay, while the vertical over-recess should be in tight management to keep the static power dissipation as low as possible.

Electrical Performance of Dense and Isolated N-Type FinFETs in Micro-Loading Effect

The side effects on N-Type FinFET Devices

Electrothermal characterization of SOI FinFETs

The side effects and the effects of thickness of source/drain fin on P-Type FinFET devices

Electrical Characteristics of n-Type FinFETs Under <inline-formula> <tex-math notation="LaTeX">$V_{T}$ </tex-math></inline-formula> Ion Implantation on SOI Substrate

Performance Characteristics of P -Channel FinFETs with Varied Si-fin Extension Lengths for Source and Drain Contacts

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Enhanced Circuit Densities in Epitaxially Defined FinFETs (EDFinFETs) over FinFETs

Drive Current and Hot Carrier Reliability Improvements of High-Aspect-Ratio N-Channel Fin-Shaped Field Effect Transistor with High-Tensile Contact Etching Stop Layer

Impact of Self-Heating Effects on Nanoscale Ge P-Channel FinFETs with Si Substrate

Electrothermal analysis of novel N-P-P FinFET with electrically doped drain: a dual material gate device for reliable nanoscale applications

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Effects of Ultra-Thin Si-fin Body Widths Upon SOI PMOS FinFETs

The FinFET effect in lateral 4H-SiC and Silicon multi-gate MOSFETs

Design and Analysis of 18 nm FinFET Device with High Density Meshing for High-speed and Ultra-low Power Applications

Investigation of Source/Drain Recess Engineering and Its Impacts on FinFET and GAA Nanosheet FET at 5 Nm Node

Thermal Stress Probing the Channel-Length Modulation Effect of Nano N-Type FinFETs.

Comparison of Total Ionizing Dose Effects in 16-nm Core and I/O n-FinFETs

The DIBL Effect of SOI P-Channel FinFETs under Various SDE Lengths