Slow and Fast Light Propagation in Semiconductor Quantum Dots

bagher m tabibi,jaetae seo,qiguang yang,william yu

DOI: https://doi.org/10.1364/fio.2009.fwb4

2009-01-01

Abstract:The group velocity of a laser pulse in semiconductor quantum dots has been investigated and both slow and fast light propagation were observed experimentally. The phenomena will be explained directly in time-domain in this paper.

What problem does this paper attempt to address?

Population Dynamics and Photon Emission Statistics of the Coupled Semiconductor Quantum Dots Driven by Pulse Field

Mu-Tian Cheng,Si Xiao,Shao-Ding Liu,Hui-Jun Zhou,Yao-Yi Li,Qu-Quan Wang

DOI: https://doi.org/10.1016/j.physe.2007.09.096

2008-01-01

Abstract:We investigate the population dynamics and the photon emission statistics of the coupled semiconductor quantum dots (QDs) with pulse excitation by using quantum regression theorem and optical Bloch equations. The population of the biexciton state vertical bar b> is close to those of two exciton states (vertical bar x> and vertical bar y>) when the effective input pulse area is about pi. The calculation results reveal that both the probabilities of the cross single photon emission and the correlated photon-pair emission decrease as the input pulse area increases in every period. (C) 2007 Elsevier B.V. All rights reserved.
Semiconductor Quantum Dots: Synthesis, Properties and Applications

Donghai Feng,Guofeng Zhang,Yang Li

DOI: https://doi.org/10.3390/nano14221825

2024-01-01

Abstract:Semiconductor nanoparticles of sizes smaller than exciton Bohr diameters undergo quantum confinement and are called quantum dots (QDs), which exhibit size-dependent physicochemical properties [...]
Group-velocity slowdown in quantum-dots and quantum-dot molecules

Stephan Michael,Weng W. Chow,Hans Christian Schneider

DOI: https://doi.org/10.48550/arXiv.1403.4790

2014-03-19

Mesoscale and Nanoscale Physics

Abstract:We investigate theoretically the slowdown of optical pulses due to quantum-coherence effects in InGaAs-based quantum dots and quantum dot molecules. Simple models for the electronic structure of quantum dots and, in particular, quantum-dot molecules are described and calibrated using numerical simulations. It is shown how these models can be used to design optimized quantum-dot molecules for quantum coherence applications. The wave functions and energies obtained from the optimizations are used as input for a microscopic calculation of the quantum-dot material dynamics including carrier scattering and polarization dephasing. The achievable group velocity slowdown in quantum-coherence V schemes consisting of quantum-dot molecule states is shown to be substantially higher than what is achievable from similar transitions in typical InGaAs-based single quantum dots.
Slow Light Propagation In Trapped Atomic Quantum Gases

Oe Mustecaplioglu,L You

DOI: https://doi.org/10.1103/PhysRevA.64.013604

IF: 2.971

2001-01-01

Physical Review A

Abstract:We study semiclassical slow light propagation in trapped two-level atomic quantum gases. The temperature-dependent behaviors of both group velocity and transmissions are compared for low-temperature Bose, Fermi, and Boltzman gases within the local-density approximation for their spatial density profile.
Slow and fast light behavior of single photons from a quantum dot interacting with the excited state hyperfine structure of the Cesium D1-line

Tim Kroh,Janik Wolters,Andreas Ahlrichs,Andreas W. Schell,Alexander Thoma,Stephan Reitzenstein,Johannes S. Wildmann,Eugenio Zallo,Rinaldo Trotta,Armando Rastelli,Oliver G. Schmidt,Oliver Benson

DOI: https://doi.org/10.1038/s41598-019-50062-x

2019-04-17

Abstract:Hybrid interfaces between distinct quantum systems play a major role in the implementation of quantum networks. Quantum states have to be stored in memories to synchronize the photon arrival times for entanglement swapping by projective measurements in quantum repeaters or for entanglement purification. Here, we analyze the distortion of a single photon wave packet propagating through a dispersive and absorptive medium with high spectral resolution. Single photons are generated from a single In(Ga)As quantum dot with its excitonic transition precisely set relative to the Cesium D1 transition. The delay of spectral components of the single photon wave packet with almost Fourier-limited width is investigated in detail with a 200 MHz narrow-band monolithic Fabry-Pérot resonator. Reflecting the excited state hyperfine structure of Cesium, "slow light" and "fast light" behavior is observed. As a step towards room-temperature alkali vapor memories, quantum dot photons are delayed for 5 ns by strong dispersion between the two 1.17 GHz hyperfine-split excited state transitions. Based on optical pumping on the hyperfine-split ground states, we propose a simple, all-optically controllable delay for synchronization of heralded narrow-band photons in a quantum network.

Quantum Physics
Tunable Slow Light Device Using Quantum Dot Semiconductor Laser

P. C. Peng,C. T. Lin,H. C. Kuo,W. K. Tsai,J. N. Liu,S. Chi,S. C. Wang,G. Lin,H. P. Yang,K. F. Lin,J. Y. Chi

DOI: https://doi.org/10.1364/oe.14.012880

IF: 3.8

2006-01-01

Optics Express

Abstract:This investigation experimentally demonstrates a tunable slow light device using a quantum dot (QD) semiconductor laser. The QD semiconductor laser at 1.3 mum fabricated on a GaAs substrate is grown by molecular beam epitaxy. Tunable slow light can be achieved by adjusting the bias current and wavelength detuning. The slow light device operated under probe signal from 5 to 10 GHz is presented. Moreover, we also demonstrate that the tunable slow light device can be used in a subcarrier multiplexed system.
Slow Light in Quantum Dot Semiconductor Laser for Photonic RF Phase Shifter

P. C. Peng,J. N. Liu,C. T. Lin,H. C. Kuo,J. H. Chen,S. C. Wang,S. Chi,J. Y. Chi

DOI: https://doi.org/10.1364/ipnra.2007.jtua1

2007-01-01

Abstract:Get PDF Email Share Share with Facebook Tweet This Post on reddit Share with LinkedIn Add to CiteULike Add to Mendeley Add to BibSonomy Get Citation Copy Citation Text P. C. Peng, J. N. Liu, C. T. Lin, H. C. Kuo, J. H. Chen, S. C. Wang, S. Chi, and J. Y. Chi, "Slow Light in Quantum Dot Semiconductor Laser for Photonic RF Phase Shifter," in Integrated Photonics and Nanophotonics Research and Applications / Slow and Fast Light, OSA Technical Digest (CD) (Optica Publishing Group, 2007), paper JTuA1. Export Citation BibTex Endnote (RIS) HTML Plain Text Citation alert Save article
Ultrafast Exciton Transport at Early Times in Quantum Dot Solids.

Zhilong Zhang,Jooyoung Sung,Daniel T. W. Toolan,Sanyang Han,Raj Pandya,Michael P. Weir,James Xiao,Simon Dowland,Mengxia Liu,Anthony J. Ryan,Richard A. L. Jones,Shujuan Huang,Akshay Rao

DOI: https://doi.org/10.1038/s41563-022-01204-6

IF: 41.2

2022-01-01

Nature Materials

Abstract:Quantum dot (QD) solids are an emerging platform for developing a range of optoelectronic devices. Thus, understanding exciton dynamics is essential towards developing and optimizing QD devices. Here, using transient absorption microscopy, we reveal the initial exciton dynamics in QDs with femtosecond timescales. We observe high exciton diffusivity (~10 2 cm 2 s –1 ) in lead chalcogenide QDs within the first few hundred femtoseconds after photoexcitation followed by a transition to a slower regime (~10 –1 –1 cm 2 s –1 ). QD solids with larger interdot distances exhibit higher initial diffusivity and a delayed transition to the slower regime, while higher QD packing density and heterogeneity accelerate this transition. The fast transport regime occurs only in materials with exciton Bohr radii much larger than the QD sizes, suggesting the transport of delocalized excitons in this regime and a transition to slower transport governed by exciton localization. These findings suggest routes to control the optoelectronic properties of QD solids.
Slow Light Using P-Doped Semiconductor Heterostructures for High-Bandwidth Nonlinear Signal Processing

Dong Sun,Pei-Cheng Ku

DOI: https://doi.org/10.1109/jlt.2008.2005121

IF: 4.7

2008-01-01

Journal of Lightwave Technology

Abstract:We propose a novel scheme for slow light based on a resonant three-level lambda system (RTLS) in a p-doped semiconductor heterostructure. Numerical simulations show that a slow-down factor of 145 and a slow-down-bandwidth product exceeding 200 THz can be achieved in semiconductor quantum wells at room temperature. These figures of merit make the RTLS slow light especially useful for the enhancement of the optical nonlinearity in high bandwidth all-optical signal processing applications.
Slow Light and Signal Processing in Silicon Nano-waveguides

Yikai Su,Qiang Li,Fangfei Liu,Qingjiang Chang,Ziyang Zhang,Min Qiu

DOI: https://doi.org/10.1109/ipgc.2008.4781449

2008-01-01

Abstract:We report various all-optical signal processing functions using silicon microring resonators with a 450times250-nm cross section. These demonstrations include slow-light delay of phase-modulated data and microwave photonic signal, wavelength conversion/multicasting, format conversions, and optical differentiation.
Slow Light in Resonant Raman Systems for High-Speed Applications

Dong Sun,P. C. Ku

DOI: https://doi.org/10.1364/fio.2006.fws2

2006-01-01

Abstract:We propose a novel slow light scheme using a resonant Raman system. Slow down factor of 19 with a bandwidth exceeding 2 THz can be achieved in semiconductor quantum wells with signal gain at room temperature.
Compared Propagation Characteristics of Superluminal and Slow Light in SOA and EDFA Based on Rectangle Signals

Fu Wang,Zhi Wang,Chongqing Wu,Zhenchao Sun,Yaya Mao,Lanlan Liu,Qiang Li

DOI: https://doi.org/10.1016/j.optcom.2015.04.083

IF: 2.4

2015-01-01

Optics Communications

Abstract:Based on the general mechanism of the coherent population oscillations (CPO) in the Semiconductor optical amplifiers (SOA) and Erbium doped fiber amplifiers (EDFA), the group time delay of rectangle signal propagating in the active media is deduced. Compared with the sinusoidal signal, the time delay difference between the fundamental harmonics (FHFD: fundamental harmonic fractional delay) is first investigated in detail for the rectangle signal which is more popularly used in the digital signal systems. The plenty of simulations based on the propagation equations and some experiments for the sinusoidal and rectangle signals are used to analyze the differences and evaluate the slow and superluminal light effects. Furthermore, the time delay/advance always takes place accompanying with the signal distortion, which is evaluated by the total harmonic distortion (THD). The distortion caused by the SOA is smaller than that by the EDFA. A factor Q which is defined to evaluate the trade-off between the FHFD and the THD, shows that higher input power or higher optical gain is better for optical signal processing and optical telecommunications, and the SOA is more suitable for the higher modulation frequency (>10GHz).
Slow light topological photonics with counter-propagating waves and its active control on a chip

Abhishek Kumar,Yi Ji Tan,Nikhil Navaratna,Manoj Gupta,Prakash Pitchappa,Ranjan Singh

DOI: https://doi.org/10.1038/s41467-024-45175-5

IF: 16.6

2024-01-31

Nature Communications

Abstract:Abstract Topological slow light exhibits potential to achieve stopped light by virtue of its widely known robust and non-reciprocal behaviours. Conventional approach for achieving topological slow light often involves flat-band engineering without disentangling the underlying physical mechanism. Here, we unveil the presence of counter-propagating waves within valley kink states as the distinctive hallmark of the slow light topological photonic waveguides. These counter-propagating waves, supported by topological vortices along glide-symmetric interface, provide significant flexibility for controlling the slowness of light. We tune the group velocity of light by changing the spatial separation between vortices adjacent to the glide-symmetric interface. We also dynamically control the group delay by introducing a non-Hermitian defect using photoexcitation to adjust the relative strength of the counter-propagating waves. This study introduces active slow light topological photonic device on a silicon chip, opening new horizons for topological photon transport through defects, topological light-matter interactions, nonlinear topological photonics, and topological quantum photonics.

multidisciplinary sciences
Slow photons in the fast lane in chemistry

Jennifer I. L. Chen,Georg von Freymann,Sung Yeun Choi,Vladimir Kitaev,Geoffrey A. Ozin

DOI: https://doi.org/10.1039/b708474a

2008-01-01

J. Mater. Chem.

Abstract:A driving force in the rapidly developing field of photonic crystals has been the photonic bandgap, a range of energies where the propagation of light is completely forbidden. The photonic bandgap allows the design of photonic lattices that localize, guide and bend light at sub-micron length scales, providing opportunities for the creation of miniature optical devices and integrated optical circuits to help drive the revolution in photonics. A less well known attribute of photonic crystals is their theoretical ability to slow light to a velocity of zero. This phenomenon can be achieved at the high and low energy edges of photonic stopgaps where the photonic bands are flat and light exists as a standing wave commensurate with the photonic lattice and travels at a group velocity of zero, referred to as “slow photons” herein. It has been shown theoretically that the probability of harvesting slow photons scales inversely with their group velocity. This means that a number of well known photon driven processes and devices in chemistry and physics can be enhanced by capturing this unique property of slow photons. In this paper we will look at slow photons mainly through the eye of chemistry and highlight some recent developments in this exciting and emerging field that demonstrate the potential of slow photons in materials chemistry and nanochemistry.
Slow Light and Its Potential Applications

Li Zhengbin,Peng Chao,Xu Anshi

DOI: https://doi.org/10.1109/aoe.2007.4410890

2007-01-01

Abstract:Summary form only given. Slow light has achieved great progress in waveguide and fibers in room temperature, which could be accelerating the transition of this technique to applications. This talk will review devising methods for tailoring the dispersion of optical materials, such as electromagnetically induced transparency, photonic crystals, and nano-optic resonators over the last decade. And the potential applications of slow light for optical buffering, data synchronization, optical memories, and optical signal processing will be cataloged. Then the interaction between slow light and Sagnac effect is discussed. The concept of the Sagnac effect in a slow-light medium and resonator structure with high group dispersion is investigated. It is found that a slow-light medium can be utilized for relative motion sensing, and a slow-light resonator structure is suitable to detect absolute rotation for navigation purposes. It is noted that the high group dispersion leads to a huge enhancement of the rotation sensor's sensitivity in a resonating structure, and an approach to evaluate and design resonator devices with slow-light property is proposed. Moreover, a folded loop-lattice-based structure is numerically simulated to verify the concept.
Slow Light and Superluminality in Kerr Media Without a Pump

QG Yang,JT Seo,B Tabibi,H Wang

DOI: https://doi.org/10.1103/physrevlett.95.063902

IF: 8.6

2005-01-01

Physical Review Letters

Abstract:Subluminal and superluminal propagation of a light pulse in Kerr materials has been investigated. Group velocities as slow as much less than 1 mm per second to as fast as negative several thousands meters per second can easily be obtained in the Kerr medium, which possesses a large nonlinear refractive index and long relaxation time, such as Cr3+-doped alexandrite, ruby, and GdAlO3. The physical mechanism is the strong highly dispersive coupling between different frequency components of the pulse.
Controllable Spin-Resolved Photon Emission Enhanced by a Slow-Light Mode in Photonic Crystal Waveguides on a Chip.

Shushu Shi,Shan Xiao,Jingnan Yang,Shulun Li,Xin Xie,Jianchen Dang,Longlong Yang,Danjie Dai,Bowen Fu,Sai Yan,Yu Yuan,Rui Zhu,Bei-Bei Li,Zhanchun Zuo,Can Wang,Haiqiao Ni,Zhichuan Niu,Kuijuan Jin,Qihuang Gong,Xiulai Xu

DOI: https://doi.org/10.1364/oe.483244

IF: 3.8

2023-01-01

Optics Express

Abstract:We report the slow-light enhanced spin-resolved in-plane emission from a single quantum dot (QD) in a photonic crystal waveguide (PCW). The slow light dispersions in PCWs are designed to match the emission wavelengths of single QDs. The resonance between two spin states emitted from a single QD and a slow light mode of a waveguide is investigated under a magnetic field with Faraday configuration. Two spin states of a single QD experience different degrees of enhancement as their emission wavelengths are shifted by combining diamagnetic and Zeeman effects with an optical excitation power control. A circular polarization degree up to 0.81 is achieved by changing the off-resonant excitation power. Strongly polarized photon emission enhanced by a slow light mode shows great potential to attain controllable spin-resolved photon sources for integrated optical quantum networks on chip.
Recent Developments of Quantum Dot Materials for High Speed and Ultrafast Lasers

Zhonghui Yao,Cheng Jiang,Xu Wang,Hongmei Chen,Hongpei Wang,Liang Qin,Ziyang Zhang

DOI: https://doi.org/10.3390/nano12071058

IF: 5.3

2022-03-24

Nanomaterials

Abstract:Owing to their high integration and functionality, nanometer-scale optoelectronic devices based on III-V semiconductor materials are emerging as an enabling technology for fiber-optic communication applications. Semiconductor quantum dots (QDs) with the three-dimensional carrier confinement offer potential advantages to such optoelectronic devices in terms of high modulation bandwidth, low threshold current density, temperature insensitivity, reduced saturation fluence, and wavelength flexibility. In this paper, we review the development of the molecular beam epitaxial (MBE) growth methods, material properties, and device characteristics of semiconductor QDs. Two kinds of III-V QD-based lasers for optical communication are summarized: one is the active electrical pumped lasers, such as the Fabry–Perot lasers, the distributed feedback lasers, and the vertical cavity surface emitting lasers, and the other is the passive lasers and the instance of the semiconductor saturable absorber mirrors mode-locked lasers. By analyzing the pros and cons of the different QD lasers by their structures, mechanisms, and performance, the challenges that arise when using these devices for the applications of fiber-optic communication have been presented.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
10Ghz Tunable Slow Light in 1.3 Μm Quantum Dot Vertical-Cavity Surface-Emitting Lasers Amplifier

C. T. Lin,P. C. Peng,H. C. Kuo,G Lin,W. K. Tsai,H. P. Yang,K. F. Lin,J. Y. Chi,B. S. Chiou,S. Chi,S. C. Wang

DOI: https://doi.org/10.1364/oaa.2006.ome3

2006-01-01

Abstract:This investigation experimentally demonstrates tunable slow light by varying the bias currents in a 1.3 μm quantum dot vertical-cavity surface-emitting laser. The maximum delay of 42 ps at 10 GHz is achieved.
Time-resolved and time-integrated photoluminescence analysis of state filling and quantum confinement of silicon quantum dots

Lap Van Dao,Xiaoming Wen,My Tra Thi,Peter Hannaford,Eun-Chel Cho,Young H. Cho,Yidan Huang,My Tra Thi Do

DOI: https://doi.org/10.1063/1.1823027

IF: 2.877

2005-01-01

Journal of Applied Physics

Abstract:In this paper we report studies of the optical properties of silicon quantum dot structures. From time-resolved and time-integrated photoluminescence measurements we investigate the state-filling effect and carrier lifetime, and discuss the parabolic confinement of quantum dot structures and the large energy splitting between quantum dot levels. The photoluminescence intensities for different quantum dot levels decay with a stretched exponential function and the decay times are in the range 2–100μs depending on the observation wavelength and the dot size.

physics, applied

Slow and Fast Light Propagation in Semiconductor Quantum Dots

Population Dynamics and Photon Emission Statistics of the Coupled Semiconductor Quantum Dots Driven by Pulse Field

Semiconductor Quantum Dots: Synthesis, Properties and Applications

Group-velocity slowdown in quantum-dots and quantum-dot molecules

Slow Light Propagation In Trapped Atomic Quantum Gases

Slow and fast light behavior of single photons from a quantum dot interacting with the excited state hyperfine structure of the Cesium D1-line

Tunable Slow Light Device Using Quantum Dot Semiconductor Laser

Slow Light in Quantum Dot Semiconductor Laser for Photonic RF Phase Shifter

Ultrafast Exciton Transport at Early Times in Quantum Dot Solids.

Slow Light Using P-Doped Semiconductor Heterostructures for High-Bandwidth Nonlinear Signal Processing

Slow Light and Signal Processing in Silicon Nano-waveguides

Slow Light in Resonant Raman Systems for High-Speed Applications

Compared Propagation Characteristics of Superluminal and Slow Light in SOA and EDFA Based on Rectangle Signals

Slow light topological photonics with counter-propagating waves and its active control on a chip

Slow photons in the fast lane in chemistry

Slow Light and Its Potential Applications

Slow Light and Superluminality in Kerr Media Without a Pump

Controllable Spin-Resolved Photon Emission Enhanced by a Slow-Light Mode in Photonic Crystal Waveguides on a Chip.

Recent Developments of Quantum Dot Materials for High Speed and Ultrafast Lasers

10Ghz Tunable Slow Light in 1.3 Μm Quantum Dot Vertical-Cavity Surface-Emitting Lasers Amplifier

Time-resolved and time-integrated photoluminescence analysis of state filling and quantum confinement of silicon quantum dots