Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Tunable Slow Light Device Using Quantum Dot Semiconductor Laser

10GHz Tunable Slow Light in 1.3 µm Quantum Dot Vertical-Cavity Surface-Emitting Laser Amplifier

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Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Tunable Slow Light in Quantum Well Vertical-Cavity Surface-Emitting Laser at 40 Ghz

Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

Tunable Quantum Dot Lasers Grown Directly on Silicon

10 GHz Tunable Slow Light in Multi-Quantum Well Distributed Feedback Laser

Tunable Optical Group Delay In Quantum Dot Vertical-Cavity Surface-Emitting Laser At 10 Ghz

1.3 Qm Tunable Quantum Dot Lasers

Slow Light Control with Electric Fields in Vertically Coupled InGaAs/GaAs Quantum Dots

Slow Light in Quantum Dot Semiconductor Laser for Photonic RF Phase Shifter

White light-emitting quantum dot diodes and tuning of luminescence processes

Tunable Slow Light in Semiconductor Optical Amplifier Without External Pump Laser

Tunable Ultra‐Narrow Linewidth Light Source Through Liquid Crystal‐Assisted Mini‐Bound‐States‐In‐Continuum Cavities

Tunable Slow Light In Semiconductor Metamaterial In A Broad Terahertz Regime

1.3 [micro Sign]m Quantum Dot Vertical-Cavity Surface-Emitting Laser with External Light Injection

Experimental Demonstration of Subnano-Second Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Tunable V-Cavity Semiconductor Laser And Modules

Tunable Slow And Fast Light Device Based On A Carbon Nanotube Resonator

Ultra-broadband tunable single- and double-mode InAs/InP quantum dot external-cavity laser emitting around 1.65 μm