Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

10GHz Tunable Slow Light in 1.3 µm Quantum Dot Vertical-Cavity Surface-Emitting Laser Amplifier

Tunable Slow Light Device Using Quantum Dot Semiconductor Laser

Tunable Slow Light in Quantum Well Vertical-Cavity Surface-Emitting Laser at 40 Ghz

Tunable Optical Group Delay In Quantum Dot Vertical-Cavity Surface-Emitting Laser At 10 Ghz

10 GHz Tunable Slow Light in Multi-Quantum Well Distributed Feedback Laser

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Ultra-Low Threshold Lasing In A Quantum Dot Microdisk Cavity

1.3 Qm Tunable Quantum Dot Lasers

Electro-optic tuning of a single-frequency ultranarrow linewidth microdisk laser

Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

Tunable Optical Delay Using Quantum Dot VCSEL by Polarization Control

Tunable Slow Light using Quantum Dot VCSEL for Subcarrier Multiplexed System

Experimental Demonstration of Subnano-Second Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Tunable Quantum Dot Lasers Grown Directly on Silicon

Carrier-induced Fast Wavelength Switching in Tunable V-cavity Laser with Quantum Well Intermixed Tuning Section.

Tunable Ultra‐Narrow Linewidth Light Source Through Liquid Crystal‐Assisted Mini‐Bound‐States‐In‐Continuum Cavities

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Ultra-broadband tunable single- and double-mode InAs/InP quantum dot external-cavity laser emitting around 1.65 μm

Narrow Linewidth Tunable V-cavity Laser Using Self-Injection Method

Ultra-broadband Tunable Single- and Double-Mode InAs/InP Quantum Dot External-Cavity Laser Emitting Around 165 Μm

Fast Lasing Wavelength Tuning in Single Nanowires