10Ghz Tunable Slow Light in 1.3 Μm Quantum Dot Vertical-Cavity Surface-Emitting Lasers Amplifier

S. C. Wang

DOI: https://doi.org/10.1364/oaa.2006.ome3

2006-01-01

Abstract:This investigation experimentally demonstrates tunable slow light by varying the bias currents in a 1.3 μm quantum dot vertical-cavity surface-emitting laser. The maximum delay of 42 ps at 10 GHz is achieved.

What problem does this paper attempt to address?

Tunable Slow Light Device Using Quantum Dot Semiconductor Laser

P. C. Peng,C. T. Lin,H. C. Kuo,W. K. Tsai,J. N. Liu,S. Chi,S. C. Wang,G. Lin,H. P. Yang,K. F. Lin,J. Y. Chi

DOI: https://doi.org/10.1364/oe.14.012880

IF: 3.8

2006-01-01

Optics Express

Abstract:This investigation experimentally demonstrates a tunable slow light device using a quantum dot (QD) semiconductor laser. The QD semiconductor laser at 1.3 mum fabricated on a GaAs substrate is grown by molecular beam epitaxy. Tunable slow light can be achieved by adjusting the bias current and wavelength detuning. The slow light device operated under probe signal from 5 to 10 GHz is presented. Moreover, we also demonstrate that the tunable slow light device can be used in a subcarrier multiplexed system.
Tunable Slow Light in Quantum Well Vertical-Cavity Surface-Emitting Laser at 40 Ghz

P. C. Peng,F. M. Wu,C. T. Lin,J. H. Chen,P. T. Shih,W. C. Kao,W. J. Jiang,H. C. Kuo,S. Chi

DOI: https://doi.org/10.1109/cleo.2008.4552017

2008-01-01

Abstract:This investigation experimentally demonstrates tunable slow light in a quantum well vertical-cavity surface-emitting laser at 40 GHz. Tunable optical delays are achieved by adjusting the bias current and wavelength detuning.
Tunable Optical Group Delay In Quantum Dot Vertical-Cavity Surface-Emitting Laser At 10 Ghz

P. C. Peng,C. T. Lin,H. C. Kuo,G. Lin,W. K. Tsai,H. P. Yang,K. F. Lin,J. Y. Chi,S. Chi,S. C. Wang

DOI: https://doi.org/10.1049/el:20061316

2006-01-01

Electronics Letters

Abstract:This investigation experimentally demonstrates tunable optical group delay in a 1.3 mu m quantum dot vertical-cavity surface-emitting laser (QD VCSEL). The QD VCSEL is fabricated on a GaAs substrate. Tunable delays are achieved by varying the bias currents, and the maximum delay of 42 ps at 10 GHz has been demonstrated at room temperature.
10 GHz Tunable Slow Light in Multi-Quantum Well Distributed Feedback Laser

Lin, C.T.,Peng, P.C.,Chen, J.H.,Peng, C.F.

DOI: https://doi.org/10.1109/ecoc.2006.4801250

2006-01-01

Abstract:This investigation experimentally demonstrates tunable slow light in a 1550 nm distributed feedback Laser. Tunable optical group delays of 30 ps for 10 GHz are achieved by varying the bias current.
Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Yating Wan,Sen Zhang,Justin C. Norman,M. J. Kennedy,William He,Yeyu Tong,Chen Shang,Jian-Jun He,Hon Ki Tsang,Arthur C. Gossard,John E. Bowers

DOI: https://doi.org/10.1002/lpor.201900348

2020-01-01

LASER & PHOTONICS REVIEWS

Abstract:Wavelength tunable lasers are increasingly needed as key components for wavelength resource management technologies in future dense wavelength division multiplexing (DWDM) systems. While material systems with multiple quantum wells as an active region are widely used in long‐wavelength tunable lasers, the unique advantages of InAs/GaAs quantum dots (QDs) for low‐power operation, excellent thermal stability, and wide spectral bandwidth may open a new avenue in this field. Combining the advantages of QDs with a special designed half‐wave coupled cavity structure, directly modulated, single‐mode, tunable InAs/GaAs QD lasers are demonstrated at 1.3 µm wavelength range. The half‐wave coupler provides an active–active coupled‐cavity tunable structure without involving gratings or multiple epitaxial growths, producing synchronous power transfer in the two output waveguides and high single‐mode selectivity. 27‐channel wavelength switching is achieved with side‐mode‐suppression‐ratio of around 35 dB. Under continuous‐wave electrical injection, over 9 mW output power can be measured with 716 kHz Lorentzian linewidth, 4 GHz 3‐dB bandwidth, and 8 Gbit s−1 non‐return‐to‐zero signal modulation by directly probing the chip.
Ultra-Low Threshold Lasing In A Quantum Dot Microdisk Cavity

G. S. Solomon,S. Goetzinger,W. Fang,Z. G. Xie,H. Cao

DOI: https://doi.org/10.1109/cleo.2007.4452488

2007-01-01

Abstract:We describe microdisk lasers exhibiting submicrowatt CW lasing thresholds from a small number of QD emitters. Changes in the cavity linewidth, second-order correlation measurements, and output emission versus input pumping are used to verify lasing. (C)2007 Optical Society of America
1.3 Qm Tunable Quantum Dot Lasers

Yating Wan,Sen Zhang,Justin Norman,M. J. Kennedy,William He,Yeyu Tong,Chen Shang,Jian-Jun He,Hon Ki Tsang,Arthur C. Gossard,John E. Bowers

DOI: https://doi.org/10.1364/cleo_si.2020.sf2e.1

2020-01-01

Abstract:We report the first directly modulated single-mode tunable quantum dot lasers at 1.3 pm. 27-channel wavelength switching was achieved with side-mode-suppression-ratio of around 35 dB without requiring nonuniform gratings or epitaxial regrowth.
Electro-optic tuning of a single-frequency ultranarrow linewidth microdisk laser

Jintian Lin,Saeed Farajollahi,Zhiwei Fang,Ni Yao,Renhong Gao,Jianglin Guan,Li Deng,Tao Lu,Min Wang,Haisu Zhang,Wei Fang,Lingling Qiao,Ya Cheng

DOI: https://doi.org/10.1117/1.AP.4.3.036001

IF: 13.582

2022-01-01

Advanced Photonics

Abstract:Single-frequency ultranarrow linewidth on-chip microlasers with a fast wavelength tunability play a game-changing role in a broad spectrum of applications ranging from coherent communication, light detection and ranging, to metrology and sensing. Design and fabrication of such light sources remain a challenge due to the difficulties in making a laser cavity that has an ultrahigh optical quality (Q) factor and supports only a single lasing frequency simultaneously. Here, we demonstrate a unique single-frequency ultranarrow linewidth lasing mechanism on an erbium ion-doped lithium niobate (LN) microdisk through simultaneous excitation of high-Q polygon modes at both pump and laser wavelengths. As the polygon modes are sparse within the optical gain bandwidth compared with the whispering gallery mode counterpart, while their Q factors (above 10 million) are even higher due to the significantly reduced scattering on their propagation paths, single-frequency lasing with a linewidth as narrow as 322 Hz is observed. The measured linewidth is three orders of magnitude narrower than the previous record in on-chip LN microlasers. Finally, enabled by the strong linear electro-optic effect of LN, real-time electro-optical tuning of the microlaser with a high tuning efficiency of similar to 50 pm/100 V is demonstrated.
Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

Yating Wan,Sen Zhang,Justin C. Norman,MJ Kennedy,William He,Yeyu Tong,Chen Shang,Jian‐Jun He,Hon Ki Tsang,Arthur C. Gossard,John E. Bowers

DOI: https://doi.org/10.1002/lpor.202070021

2020-01-01

Abstract:In article number 1900348, Yating Wan and co-workers demonstrate directly modulated, single-mode, tunable InAs/GaAs quantum dot (QD) lasers at 1.3 µm wavelength range, by combining the advantages of QDs with a special designed half-wave coupled cavity structure. Without involving re-growth steps or sub-wavelength grating lithography, 27-channel wavelength switching was achieved with side-mode-suppression-ratio of around 35 dB and output power of over 9 mW.
Tunable Optical Delay Using Quantum Dot VCSEL by Polarization Control

Peng, P.C.,Lin, C.T.,Kuo, H.C.,Tsai, W.K.

DOI: https://doi.org/10.1109/islc.2006.1708083

2006-01-01

Abstract:This study experimentally demonstrates the tunable optical delay using a 1.3 mum quantum dot VCSEL. Tunable optical delays of 42 ps for 10 GHz are achieved by varying the bias current and the signal polarization
Tunable Slow Light using Quantum Dot VCSEL for Subcarrier Multiplexed System

p c peng,c t lin,h c kuo,j n liu,w k tsai,gongru lin,h p yang,k f lin,j y chi,sien chi,s c wang

DOI: https://doi.org/10.1109/OFC.2007.4348749

2007-01-01

Abstract:We demonstrate that the slow light device can be used in a SCM system for the first time. Tunable slow light can be achieved by adjusting the bias current and wavelength detuning of QD VCSEL.
Experimental Demonstration of Subnano-Second Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Shanli Guo,Jianjun Meng,Lei Wang,Li Zou,Hongli Zhu,Jian-Jun He

DOI: https://doi.org/10.1364/acpc.2012.as4h.6

2012-01-01

Abstract:The tuning characteristics based on both free carrier dispersion and thermal effect induced by the tuning current of a V-coupled-cavity laser are investigated. Sub-naosecond and tens of microseconds wavelength switching time between two neighboring channels are measured, respectively.
Tunable Quantum Dot Lasers Grown Directly on Silicon

Yating Wan,Sen Zhang,Justin C. Norman,M. J. Kennedy,William He,Songtao Liu,Chao Xiang,Chen Shang,Jian-Jun He,Arthur C. Gossard,John E. Bowers

DOI: https://doi.org/10.1364/optica.6.001394

IF: 10.4

2019-01-01

Optica

Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.
Carrier-induced Fast Wavelength Switching in Tunable V-cavity Laser with Quantum Well Intermixed Tuning Section.

Xin Zhang,Jian-Jun He,Neng Liu,Jan J. Dubowski

DOI: https://doi.org/10.1364/oe.23.026336

IF: 3.8

2015-01-01

Optics Express

Abstract:We report on the fast wavelength switching in V-cavity laser (VCL) with quantum well intermixed tuning section. The laser wavelength can be switched between 32 channels at 100 GHz spacing using a single electrode control. The fabrication process involves a quantum well intermixing (QWI) process using KrF laser irradiation and rapid thermal annealing (RTA). The tuning current is less than 40 mA, much lower than previously demonstrated tunable VCL based on electro-thermal-optic effect. The wavelength switching is also faster by three orders of magnitude. The dynamic switching characteristics between two channels with different numbers of intermediate channels are investigated. It shows that the switching time is about 1 ns between adjacent channels and increases up to 12 ns with increasing number of intermediate channels.
Tunable Ultra‐Narrow Linewidth Light Source Through Liquid Crystal‐Assisted Mini‐Bound‐States‐In‐Continuum Cavities

Renjie Tang,Yiting Wang,Jialing Jian,Zezhao Ju,Yalan Si,Jianghong Wu,Yuting Ye,Yilin Shi,Kangjian Bao,Yingchun Wu,Yiheng Tang,Chunlei Sun,Dawei Gao,Hongtao Lin,Lan Li

DOI: https://doi.org/10.1002/adom.202401592

IF: 9

2024-01-01

Advanced Optical Materials

Abstract:The introduction of liquid crystals into microcavities has garnered considerable attention for their exceptional tunability and high sensitivity to external perturbation factors within their distinct phase states. Here, a novel light source with both wavelength tunability and an exceptionally narrow linewidth is presented. This innovation is realized by strategically manipulating LC molecules, transitioning them from a well-aligned state to a disordered state with increasing temperature. The microcavity is tailored to support bound states in the continuum, a cutting-edge concept in photonic research that allows for light localization with minimal loss. In the pursuit of potential biocompatibility and to reduce cytotoxicity, indium phosphide colloid quantum dots are opted to serve as the emissive carriers within the system. An ultra-narrow linewidth light emission of 0.039 nm is observed, corresponding to a quality factor reaching 16668, along with a tunable range of 1.21 nm and a temperature sensitivity of 33.52 pm K-1. The invention's compact size and tunable character make it an ideal candidate for a variety of potential applications, such as eco-friendly sensors with minimal ecological impact, optical modulators with precise control over light, and adaptable photonic devices that can be integrated with a diverse array of materials and configurations. A tunable ultra-narrow linewidth light emission from a liquid-crystal-based photonic crystal cavity is experimentally demonstrated. The article thoroughly studies the design of cavities, ultra-narrow linewidth light sources based on InP quantum dot, and liquid crystal-assisted wavelength tuning. The devices exhibit a quality factor of 16 668, a sensitivity of 33.52 pm K-1, and a total tuning range of 25.7 nm. image
Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Jia Xu Brian Sia,Xiang Li,Wanjun Wang,Zhongliang Qiao,Xin Guo,Jin Zhou,Callum G. Littlejohns,Chongyang Liu,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1364/oe.400666

IF: 3.8

2020-01-01

Optics Express

Abstract:The wavelength region about of 1650 nm enables pervasive applications. Some instances include methane spectroscopy, free-space/fiber communications, LIDAR, gas sensing (i.e. C2H2, C2H4, C3H8), surgery and medical diagnostics. In this work, through the hybrid integration between an III-V optical amplifier and an extended, low-loss wavelength tunable silicon Vernier cavity, we report for the first time, a III-V/silicon hybrid wavelength-tunable laser covering the application-rich wavelength region of 1647-1690 nm. Room-temperature continuous wave operation is achieved with an output power of up to 31.1 mW, corresponding to a maximum side-mode suppression ratio of 46.01 dB. The laser is ultra-coherent, with an estimated linewidth of 0.7 kHz, characterized by integrating a 35 km-long recirculating fiber loop into the delayed self-heterodyne interferometer setup. The laser linewidth is amongst the lowest in hybrid/heterogeneous III-V/silicon lasers.
Ultra-broadband tunable single- and double-mode InAs/InP quantum dot external-cavity laser emitting around 1.65 μm

Hui-Hong Yuan,Feng Gao,Tao Yang

DOI: https://doi.org/10.1364/ol.43.003025

IF: 3.6

2018-01-01

Optics Letters

Abstract:We report an ultra-wide tunable single- and double-mode InAs/InP quantum dot (QD) external-cavity (EC) laser in a Littrow configuration. By combining the high modal gain of the QD material in the long wavelength range and an anti-reflection/high-reflection facet coating, the entire single-mode tuning range was increased up to 190 nm under a relatively low constant pulsed injection current. Furthermore, the tunable range was further increased to 230 nm at different bias currents. In addition, a mode spacing as wide as 100 nm was achieved using the same QD-EC device in the dual-mode operation, corresponding to a frequency difference of approximately 11 THz.
Narrow Linewidth Tunable V-cavity Laser Using Self-Injection Method

Xiaohai Xiong,Zhipeng Hu,Sen Zhang,Xiaolu Liao,Jian-Jun He

DOI: https://doi.org/10.1364/oe.25.032957

IF: 3.8

2017-01-01

Optics Express

Abstract:A widely tunable V-cavity semiconductor laser with kilohertz linewidth is demonstrated using simple self-injection method. The tunable laser is packaged into a small-form-factor 9-pin TOSA and can be tuned over 22 channels at 100 GHz spacing with side mode suppression ratios over 36 dB. Self-injection method is used for linewidth reduction by applying optical feedback. Linewidth of the V-cavity laser can be compressed from several megahertz to tens of kilohertz. The linewidth reduction method is essentially channel independent and can be easily realized. It can meet the requirements of many applications such as high-order modulation, coherent communication and sensing. (C) 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Ultra-broadband Tunable Single- and Double-Mode InAs/InP Quantum Dot External-Cavity Laser Emitting Around 165 Μm

Hui-Hong Yuan,Feng Gao,Tao Yang

DOI: https://doi.org/10.1364/ol.43.003025

IF: 3.6

2018-01-01

Optics Letters

Abstract:We report an ultra-wide tunable single- and double-mode InAs/InP quantum dot (QD) external-cavity (EC) laser in a Littrow configuration. By combining the high modal gain of the QD material in the long wavelength range and an anti-reflection/high-reflection facet coating, the entire single-mode tuning range was increased up to 190 nm under a relatively low constant pulsed injection current. Furthermore, the tunable range was further increased to 230 nm at different bias currents. In addition, a mode spacing as wide as 100 nm was achieved using the same QD-EC device in the dual-mode operation, corresponding to a frequency difference of approximately 11 THz. (C) 2018 Optical Society of America
Fast Lasing Wavelength Tuning in Single Nanowires

Peizhen Xu,Jue Gong,Xin Guo,Chenguang Xin,Hao Wu,Peng Qing,Xing Lin,Wei Fang,Dawei Di,Limin Tong

DOI: https://doi.org/10.1002/adom.201900797

IF: 9

2019-01-01

Advanced Optical Materials

Abstract:Nanowire lasers hold great potential as nanoscale coherent light sources. The rapid wavelength tuning of such light sources is one of the most important parameters for practical applications. Although significant efforts have been made in the past decades, the fast and reversible lasing wavelength tuning in nanowires or structures alike remains a challenge. Here, by incorporating temperature-dependent Varshni shift of the bandgap with ultralow thermal inertia of a free-standing cadmium sulfide (CdS) nanowire, a fast lasing wavelength tuning in single nanowires with excellent reversibility is demonstrated. Above room temperature, a Varshni shift rate (approximate to 0.16 nm K-1) twice larger than that at low temperature (approximate to 0.085 nm K-1) is observed, and the nanowire lasing peak is tuned from 514 to 549 nm with step down to 0.075 nm K-1. Using a beam of CO2 laser pulses to instantaneously modulate the temperature of a free-standing lasing nanowire, a reversible wavelength tuning at a rate of approximate to 48 000 nm s(-1), which is about three orders of magnitude faster than that reported previously is achieved. The results herein suggest a very promising route to fast wavelength tuning in lasing nanowires or other nanostructures, which may lead to fast tunable nanolasers for a variety of nanophotonic applications.

10Ghz Tunable Slow Light in 1.3 Μm Quantum Dot Vertical-Cavity Surface-Emitting Lasers Amplifier

Tunable Slow Light Device Using Quantum Dot Semiconductor Laser

Tunable Slow Light in Quantum Well Vertical-Cavity Surface-Emitting Laser at 40 Ghz

Tunable Optical Group Delay In Quantum Dot Vertical-Cavity Surface-Emitting Laser At 10 Ghz

10 GHz Tunable Slow Light in Multi-Quantum Well Distributed Feedback Laser

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Ultra-Low Threshold Lasing In A Quantum Dot Microdisk Cavity

1.3 Qm Tunable Quantum Dot Lasers

Electro-optic tuning of a single-frequency ultranarrow linewidth microdisk laser

Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

Tunable Optical Delay Using Quantum Dot VCSEL by Polarization Control

Tunable Slow Light using Quantum Dot VCSEL for Subcarrier Multiplexed System

Experimental Demonstration of Subnano-Second Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Tunable Quantum Dot Lasers Grown Directly on Silicon

Carrier-induced Fast Wavelength Switching in Tunable V-cavity Laser with Quantum Well Intermixed Tuning Section.

Tunable Ultra‐Narrow Linewidth Light Source Through Liquid Crystal‐Assisted Mini‐Bound‐States‐In‐Continuum Cavities

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Ultra-broadband tunable single- and double-mode InAs/InP quantum dot external-cavity laser emitting around 1.65 μm

Narrow Linewidth Tunable V-cavity Laser Using Self-Injection Method

Ultra-broadband Tunable Single- and Double-Mode InAs/InP Quantum Dot External-Cavity Laser Emitting Around 165 Μm

Fast Lasing Wavelength Tuning in Single Nanowires