Abstract:The recent emergence of two-dimensional transition metal dichalcogenides (TMDs) provides a new laboratory for exploring the internal quantum degrees of freedom of electrons for new electronics [1]. These include the real electron spin and the valley pseudospin that labels the degenerate band extrema in momentum space. The generation and control of spin and valley pseudospin currents are at the heart of spin and valley based electronics. We will discuss two mechanisms for generating spin and valley currents of electrons in 2D transition metal dichalcogenides: (I) the valley and spin Hall current arising from the Berry curvatures [2,3]; and (II) the nonlinear valley and spin currents arising from Fermi pocket anisotropy [4]. The two effects have distinct scaling with the field and different dependence of the current direction on the field direction and crystalline axis. We discuss the possibility to observe and distinguish the two effects as distinct patterns of polarized electroluminescence at pn junction in monolayer TMDs. We show that the nonlinear current response allow two unprecedented possibilities to generate pure spin and valley flows without net charge current, either by an AC bias or by an inhomogeneous temperature distribution. This points to a new route towards electrical and thermal generations of spin and valley currents for spintronic and valleytronic applications. We will also discuss the valley Hall effect of charged excitons in monolayer TMDs. The exchange interaction between the electron and hole constituents of the exciton gives rise to an effective coupling of the excitonic valley pseudospin to its center of mass motion, which results in a valley Hall effect [5]. The valley Hall effect of charge excitons can be detected from the light emission with contrasted circular polarization on the opposite edges, which leave behind valley and spin polarized electrons. The work

Valley-Spin Physics in 2D Semiconducting Transition Metal Dichalcogenides

Spin-valley Coupled Valleytronics in Two-Dimensional Transitional Metal Dichalcogenides

Interplay of valley polarization and dynamic nuclear polarization in 2D transition metal dichalcogenides

Electrical Valley Excitation By Spin Injection In Monolayer Tmdc

Valley-spin polarized Landau levels in a monolayer semiconductor

Manipulating Spin-polarized Photocurrent in 2D Transition Metal Dichalcogenides

Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength-Dependent Mapping

Generation and Transport of Valley-Polarized Current in Transition-Metal Dichalcogenides

Valleytronics in transition metal dichalcogenides materials

Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide

Generation and Electric Control of Spin–valley-Coupled Circular Photogalvanic Current in WSe2

Generation and Electric Control of Spin-Coupled Valley Current in WSe2

Electrically switchable valley polarization, spin/valley filter, and valve effects in transition-metal dichalcogenide monolayers interfaced with two-dimensional ferromagnetic semiconductors

Valley and spin pump by scattering at non-magnetic disorders

Spin-valley Hall effects and pseudospin-1 system in transition-metal dichalcogenides: three band model approach

Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure

Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges

Experimental observation of coupled valley and spin Hall effect in p-doped WSe2 devices

Valley-Dependent Spin Transport in Monolayer Transition-Metal Dichalcogenides

Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves

Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides