Abstract:Developing high-performance Si-based light-emitting devices is the key step to realizing all-Si-based optical telecommunication. Usually, silica (SiO2) as the host matrix is used to passivate silicon nanocrystals, and a strong quantum confinement effect can be observed due to the large band offset between Si and SiO2 (~8.9 eV). Here, for further development of device properties, we fabricate Si nanocrystals (NCs)/SiC multilayers and study the changes in photoelectric properties of the LEDs induced by P dopants. PL peaks centered at 500 nm, 650 nm and 800 nm can be detected, which are attributed to surface states between SiC and Si NCs, amorphous SiC and Si NCs, respectively. PL intensities are first enhanced and then decreased after introducing P dopants. It is believed that the enhancement is due to passivation of the Si dangling bonds at the surface of Si NCs, while the suppression is ascribed to enhanced Auger recombination and new defects induced by excessive P dopants. Un-doped and P-doped LEDs based on Si NCs/SiC multilayers are fabricated and the performance is enhanced greatly after doping. As fitted, emission peaks near 500 nm and 750 nm can be detected. The current density-voltage properties indicate that the carrier transport process is dominated by FN tunneling mechanisms, while the linear relationship between the integrated EL intensity and injection current illustrates that the EL mechanism is attributed to recombination of electron–hole pairs at Si NCs induced by bipolar injection. After doping, the integrated EL intensities are enhanced by about an order of magnitude, indicating that EQE is greatly improved.

Donor-acceptor-pair Emission Characterization in N-B Doped Fluorescent SiC

Characterization of Donor–acceptor-Pair Emission in Fluorescent 6H-Sic

Synthesis, Optical Properties And Theoretical Modelling Of Discrete Emitting States In Doped Silicon Nanocrystals For Bioimaging

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide

Dependence of Photoluminescence Emission on Excitation Power and Temperature in Highly Doped 6H- SiC

Fluorescent SiC As a New Material for White LEDs

Influence of Negative-U Centers Related Carrier Dynamics on Donor-Acceptor-pair Emission in Fluorescent SiC

Fluorescent SiC for White Light-Emitting Diodes

Dislocation Luminescence in Nitrogen-Doped Czochralski and Float Zone Silicon

Double D-centers Related Donor-Acceptor-pairs Emission in Fluorescent Silicon Carbide

Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

The Role of Defects in Fluorescent Silicon Carbide Layers Grown by Sublimation Epitaxy

Lightly boron and phosphorus co-doped silicon nanocrystals

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Lateral Boron Distribution in Polycrystalline SiC Source Materials

Luminescence Properties of Ca2si5n8:Eu2+ Prepared by Gas-Pressed Sintering Using Baf2 As Flux and Cation Substitution

Photoluminescence Quantum Yield of Fluorescent Silicon Carbide Determined by an Integrating Sphere Setup

Photoluminescence and Raman Scattering Correlated Study of Boron-Doped Silicon Nanowires