Fluorescent SiC As a New Material for White LEDs

M. Syvajarvi,J. Mueller,J. W. Sun,V. Grivickas,Y. Ou,V. Jokubavicius,P. Hens,M. Kaisr,K. Ariyawong,K. Gulbinas,R. Liljedahl,M. K. Linnarsson,S. Kamiyama,P. Wellmann,E. Spiecker,H. Ou
DOI: https://doi.org/10.1088/0031-8949/2012/t148/014002
2012-01-01
Physica Scripta
Abstract:Current III–V-based white light-emitting diodes (LEDs) are available. However, their yellow phosphor converter is not efficient at high currents and includes rare-earth metals, which are becoming scarce. In this paper, we present the growth of a fluorescent silicon carbide material that is obtained by nitrogen and boron doping and that acts as a converter using a semiconductor. The luminescence is obtained at room temperature, and shows a broad luminescence band characteristic of donor-to-acceptor pair recombination. Photoluminescence intensities and carrier lifetimes reflect a sensitivity to nitrogen and boron concentrations. For an LED device, the growth needs to apply low-off-axis substrates. We show by ultra-high-resolution analytical transmission electron microscopy using aberration-corrected electrons that the growth mechanism can be stable and that there is a perfect epitaxial relation from the low-off-axis substrate and the doped layer even when there is step-bunching.
What problem does this paper attempt to address?