Abstract:The mechanical properties of Czochralski (Cz) silicon wafers dictate fundamental limits on the fabrication of diverse electronic devices. Certain impurities with sufficiently high concentrations may affect the mechanical properties of Cz silicon. The underlying mechanisms for such influences have been being explored in the past decades. In this work, the effects of antimony (Sb)- and tin (Sn)-doping at 1018 cm−3 level on the mechanical properties of Czochralski (Cz) silicon have been comparatively investigated. Since Sb and Sn have quite close tetrahedral covalent radii in silicon, the lattice strains resulted from Sb- and Sn-doping and their consequent effects on the mechanical properties of silicon are approximately identical. In silicon, Sb is an electrically active impurity while Sn is a neutral one. Therefore, the present work can essentially reveal the role of electrical activity of Sb playing in the mechanical properties of Cz silicon. It is found that Sb-doped Cz (Sb-Cz) silicon possesses a slightly higher hardness than Sn-doped Cz (Sn-Cz) silicon. Moreover, the dislocation gliding at 500 or 600 °C in Sb-Cz silicon requires a much larger critical resolved shear stress than that in Sn-Cz silicon. At such two temperatures, Sb-Cz silicon remains to be n-type in electrical conduction. The aforementioned two results are believed to be ascribed to the resistance of dislocation motion by the Coulomb interaction between the positively charged Sb ions and the dislocations that are deep-level acceptors thus being negatively charged in Sb-Cz silicon. As the temperature is increased to 700 °C and above, the dislocation gliding in Sb-Cz silicon is not substantially different from that in Sn-Cz silicon. At such elevated temperatures, Sb-Cz silicon becomes intrinsic in electrical conduction like Sn-Cz silicon. In this context, there is no Coulomb interaction between Sb ions and dislocations anymore to impede the dislocation gliding in Sb-Cz silicon. In addition, it is found that the indentation fracture toughness of Sb-Cz is almost the same as that of Sn-Cz silicon. Actually, the fracture of silicon is essentially a cleavage process, to which the electrical activity of Sb is irrelevant.

Competitive Role of Impurities on the Electrical Activity of As-Grown Σ=13, Σ=25 and Deformed Σ=9 Grain Boundaries in P-Type Silicon Bi-crystals

Electron-beam-induced Current Study of Grain Boundaries in Multicrystalline Si

Germanium in Czochralski Silicon

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Electrical/Optical Activities of Grain Boundaries in Multicrystalline Si

First principles analysis of impurities in silicon carbide grain boundaries

Phosphorus Diffusion Gettering of Substitutional Metal Contaminants at A Small-Angle Grain Boundary in N-Type Silicon: the Case of Gold

Recombination Activity Of Sigma 3 Boundaries In Boron-Doped Multicrystalline Silicon: Influence Of Iron Contamination

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

The characterization of high quality multicrystalline silicon by the electron beam induced current method

The Nature of a Low Angle Grain-Boundary in a Si Bi-Crystal with Added Fe Impurities

Uncovering the influence of common nonmetal impurities on the stability and strength of a $Σ$5 (310) grain boundary in Cu

Understanding the Effect of Impurities and Grain Boundaries on Mechanical Behavior of Si Via Nanoindentation of (110)/(100) Direct Si Bonded Wafers

Electron-beam-induced current study of grain boundaries in multicrystalline silicon

Effect Of Au Contamination On The Electrical Characteristics Of A "Model" Small-Angle Grain Boundary In N-Type Direct Silicon Bonded Wafer

Recognition and Imaging of Point Defect Diffusion, Recombination, and Reaction During Growth of Czochralski-Silicon Crystals

Silicon crystal growth from the melt: Analysis from atomic and macro scales