Tuning the Electron Transport Properties of Boron-Nitride Nanoribbons with Electron and Hole Doping

L. L. Song,X. H. Zheng,H. Hao,J. Lan,X. L. Wang,Z. Zeng

DOI: https://doi.org/10.1039/c4ra07769e

IF: 4.036

2014-01-01

RSC Advances

Abstract:C chain doped BN nanoribbons can be either metallic or semiconducting, depending on how the C chains are located.

What problem does this paper attempt to address?

Tuning the Electronic and Magnetic Properties in Zigzag Boron Nitride Nanoribbons with Carbon Dopants

L. L. Song,X. H. Zheng,H. Hao,J. Lan,X. L. Wang,Z. Zeng

DOI: https://doi.org/10.1016/j.commatsci.2013.09.014

IF: 3.572

2013-01-01

Computational Materials Science

Abstract:We report a first-principles investigation on the tuning effects of carbon dopants on the electronic structures and magnetic properties of zigzag boron nitride nanoribbons (ZBNNRs). In particular, 10-ZBNNR is considered and a supercell with five unit cells is adopted in the calculations. When the supercell is doped by one carbon (C) atom, the dopant tends to substitute the edge atom resulting in a 0.625μB magnetic moment on the dopant and the system becomes a magnetic semiconductor. By changing the dopant position, namely, from the edge to the ribbon center, the nanoribbon transforms from a magnetic semiconductor into a metal. If the edges of the supercell are doped by two C atoms, the nanoribbons become a nonmagnetic semiconductor. With the increase of the dopant concentration, the conductivity of the ZBNNRs can be greatly improved. Especially, with careful design of the dopant distribution, half-metallic ZBNNRs can be achieved.
Half Metallicity along the Edge of Zigzag Boron Nitride Nanoribbons

Fawei Zheng,Gang Zhou,Zhirong Liu,Jian Wu,Wenhui Duan,Bing-Lin Gu,S. B. Zhang

DOI: https://doi.org/10.1103/physrevb.78.205415

2008-01-01

Abstract:First-principles calculations within the local spin-density approximation reveal half metallicity in zigzag boron nitride nanoribbons (ZBNNRs). When the B edge, but not the N edge, of the ZBNNR is passivated, despite being a pure sp-electron system, the ribbon shows a giant spin splitting. The electrons at the Fermi level are 100% spin polarized with a half-metal gap of 0.38 eV and its conductivity is dominated by metallic single-spin states. The two states crossing at the Dirac point have different molecular origins, which signal a switch of carrier velocity. The ZBNNR should be a good potential candidate for wide gap spintronics.
Strain-induced Programmable Half-Metal and Spin-Gapless Semiconductor in an Edge-Doped Boron Nitride Nanoribbon

Shuze Zhu,Teng Li

DOI: https://doi.org/10.1103/physrevb.93.115401

2016-01-01

Abstract:The search for half-metals and spin-gapless semiconductors has attracted extensive attention in material design for spintronics. Existing progress in such a search often requires peculiar atomistic lattice configuration and also lacks active control of the resulting electronic properties. Here we reveal that a boron-nitride nanoribbon with a carbon-doped edge can be made a half-metal or a spin-gapless semiconductor in a programmable fashion. The mechanical strain serves as the on/off switches for functions of half-metal and spin-gapless semiconductor to occur. Our findings shed light on how the edge doping combined with strain engineering can affect electronic properties of two-dimensional materials
Structures and Electromagnetic Properties of Boron Nitride Nanoribbons Doped with Transition Metals

Jiajun Ma,Yang Wang

DOI: https://doi.org/10.1002/cphc.202200144

IF: 3.52

2022-04-20

ChemPhysChem

Abstract:Inspired by the recent discovery of the Ti-doped BN nanocages, here we report the design of novel boron nitride (BN) nanoribbons (BNNRs) doped with fourth-row transition metals (Sc-Cu) and the prediction of their structural and electromagnetic properties. First-principles calculations and ab initio molecular dynamics simulations show that Ti-doped BNNR possesses both thermodynamic and kinetic stability at high temperatures for synthesis of BN materials. Metal doping may make the nonmagnetic pristine BNNR ferromagnetic or antiferromagnetic, depending on the metal. The doping with all considered metals reduces substantially the band gap of pristine BNNR. For example, Sc-doped BNNR is ferromagnetic with an indirect band gap of 1.18 eV, while V-doped nanoribbon is antiferromagnetic with a direct gap of 2.50 eV. Remarkably, the carrier mobility in both materials is significantly enhanced compared to the pristine BNNR. Our findings suggest that doping with different metals may endow BNNRs with versatile electronic and magnetic properties.

chemistry, physical,physics, atomic, molecular & chemical
Prediction of Half Metallicity along the Edge of Boron Nitride Zigzag Nanoribbons

Fawei Zheng,Gang Zhou,Zhirong Liu,Jian Wu,Wenhui Duan,Bing-Lin Gu,S. B. Zhang

2008-01-01

Abstract:First-principles calculations reveal half metallicity in zigzag boron nitride (BN) nanoribbons (ZBNNRs). When the B edge, but not the N edge, of the ZBNNR is passivated, despite being a pure $sp$-electron system, the ribbon shows a giant spin splitting. The electrons at the Fermi level are 100% spin polarized with a half-metal gap of 0.38 eV and its conductivity is dominated by metallic single-spin states. The two states across at the Dirac point have different molecular origins, which signals a switch of carrier velocity. The ZBNNR should be a good potential candidate for widegap spintronics.
Carbon Doping Effects on the Electronic Structure of Boron Nitride

HF Zhang,CY Wang,WH Duan,RC Fang

DOI: https://doi.org/10.4028/www.scientific.net/ddf.152.19

1997-01-01

Abstract:The electronic structure of three series of cubic BN systems are studied by using the linear combination muffin-tin orbitals method with atomic sphere approximation It is shown from the calculations that C atom is a donor in the interstitial and B atom sites, while it is an acceptor in the N atom site. At the different concentration of C atom in the systems, it is possible that the C atom can occupy either the acceptor site or the donor sites at the same time, which is the real reason for one c-BN system simultaneous exhibits n- and p-type conductivities. The density of states of C atoms in different sites are totally different, and the C atom affects more on the density of states of it's neighbor atoms, which reflect the different atomic interaction characteristics between the impurity C atoms and the host atoms.
Tuning the magnetic and transport properties of boron-nitride nanotubes via oxygen-doping

Jianbao Wu,Weiyi Zhang

DOI: https://doi.org/10.1016/j.ssc.2008.12.030

IF: 1.934

2009-01-01

Solid State Communications

Abstract:Using density functional theory we show that both magnetic and transport properties become chirality-dependent once a nitrogen atom is substituted by an oxygen atom in boron-nitride nanotubes (BNNTs). As chirality increases, the dispersion width of the doping induced impurity state decreases continuously, and this yields progressively larger exchange field and stronger spin polarization. Stronger chirality favors a larger magnetic moment and band insulator while weaker chirality favors a non-magnetic metallic state. In the case of oxygen substitution for a boron atom, the deep in-gap states always yield fully spin-polarized flat-bands and saturated magnetic moment of 1μB per oxygen atom.
Electron-Beam-Induced Substitutional Carbon Doping of Boron Nitride Nanosheets, Nanoribbons, and Nanotubes

Xianlong Wei,Ming-Sheng Wang,Yoshio Bando,Dmitri Golberg

DOI: https://doi.org/10.1021/nn103548r

IF: 17.1

2011-03-29

ACS Nano

Abstract:Substitutional carbon doping of the honeycomb-like boron nitride (BN) lattices in two-dimensional (nanosheets) and one-dimensional (nanoribbons and nanotubes) nanostructures was achieved via in situ electron beam irradiation in an energy-filtering 300 kV high-resolution transmission electron microscope using a C atoms feedstock intentionally introduced into the microscope. The C substitutions for B and N atoms in the honeycomb lattices were demonstrated through electron energy loss spectroscopy, spatially resolved energy-filtered elemental mapping, and in situ electrical measurements. The preferential doping was found to occur at the sites more vulnerable to electron beam irradiation. This transformed BN nanostructures from electrical insulators to conductors. It was shown that B and N atoms in a BN nanotube could be nearly completely replaced with C atoms via electron-beam-induced doping. The doping mechanism was proposed to rely on the knockout ejections of B and N atoms and subsequent healing of vacancies with supplying C atoms.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
TUNABLE ELECTRIC CONDUCTIVITIES OF Au-DOPED BORON NITRIDE NANOTUBES

Y. J. Chen,L. Fu,Y. Chen,J. Zou,J. Li,W. H. Duan

DOI: https://doi.org/10.1142/s1793292007000702

2007-01-01

NANO

Abstract:Tunable electronic properties of nanotubes are an essential requirement for building nanotube circuits and devices. We have produced BN nanotube films with controlled electric conductivities by Au doping. The Au -doped BN nanotube films have been found to exhibit from semiconducting to metallic behavior under different Au contents. Both experimental and computing simulation studies reveal that the conductivities of the doped film are improved by the incorporation of Au atoms into nanotube walls. The doped BN nanotubes and films are expected to have potential applications in catalysts, sensors and nanoelectronics.
Electronic Properties of Graphene Nanoribbon Doped by Boron/Nitrogen Pair: A First-Principles Study

Xiao Jin,Yang Zhi-Xiong,Xie Wei-Tao,Xiao Li-Xin,Xu Hui,OuYang Fang-Ping

DOI: https://doi.org/10.1088/1674-1056/21/2/027102

2012-01-01

Abstract:By using the first-principles calculations, the electronic properties of graphene nanoribbon (GNR) doped by boron/nitrogen (B/N) bonded pair are investigated. It is found that B/N bonded pair tends to be doped at the edges of GNR and B/N pair doping in GNR is easier to carry out than single B doping and unbonded B/N co-doping in GNR. The electronic structure of GNR doped by B/N pair is very sensitive to doping site besides the ribbon width and chirality. Moreover, B/N pair doping can selectively adjust the energy gap of armchair GNR and can induce the semimetal-semiconductor transmission for zigzag GNR. This fact may lead to a possible method for energy band engineering of GNRs and benefit the design of graphene electronic device.
Converting Metallic Single-Walled Carbon Nanotubes into Semiconductors by Boron/Nitrogen Co-Doping

Zhi Xu,Wengang Lu,Wenlong Wang,Changzhi Gu,Kaihui Liu,Xuedong Bai,Enge Wang,Hongjie Dai

DOI: https://doi.org/10.1002/adma.200800830

IF: 29.4

2009-01-01

Advanced Materials

Abstract:Electronic transport measurements on boron/nitrogen co-doped single-walled carbon nanotubes (BCN-SWNTs) have been performed to determine their metallic or semiconducting character. The results obtained from a large number of BCN-SWNT-based field-effect transistors indicate that the as-grown BCN-SWNTs are purely semiconducting, while the undoped C-SWNTs consist of only about 70% semiconducting nanotubes.
Converting Metallic Single-Walled Carbon Nanotnbes Into Semiconductors By Boron/Nitrogen Co-Doping

Zhi Xu,Wengang Lu,Wenlong Wang,Changzhi Gu,Kaihui Liu,Xuedong Bai,Enge Wang,Hongjie Dai

DOI: https://doi.org/10.1002/adma.200800830

IF: 29.4

2008-01-01

Advanced Materials

Abstract:Electronic transport measurements on boron/nitrogen co-doped single-walled carbon nanotubes (BCN-SWNTs) have been performed to determine their metallic or semiconducting character. The results obtained from a large number of BCN-SWNT-based field-effect transistors indicate that the as-grown BCN-SWNTs are purely semiconducting, while the undoped C-SWNTs consist of only about 70% semiconducting nanotubes.
Investigating geometries and electronic states of boron and nitrogen Co-doping graphene nanoribbons from a DFTB algorithm

Fangzhou Jiang,Jiajing Li,Ruotian Wang,Qihang Han,Lin Zhang

DOI: https://doi.org/10.1016/j.mssp.2024.108800

IF: 4.1

2024-08-20

Materials Science in Semiconductor Processing

Abstract:Self consistent charge-density functional tight binding simulations are used to investigate the effects of doping B and N atoms on structures and electronic states of armchair graphene nanoribbons passivated by H atoms at the ribbon edges. We considered ten different doping configurations of the doping ribbons, which are categorized into two groups based on whether B and N atoms are in the same carbon ring. The geometric configurations, energy, charge density differences, and Mulliken charges are characterized. The co-doping of B and N atoms in the ribbons significantly affects band structures for different doping arrangements. As covalent bonds form between B and C atoms, the Mulliken population on B atoms changes significantly when B and N atoms are located at different positions of the nanoribbons. The electrical information helps us understand how doping can adjust the electronic states of the graphene nanoribbons to meet the various requirements of electronic devices based on these nanoribbons.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Tuning the Electronic and Optical Properties of Two-Dimensional Hydrogenated C-Bn Nanosheets by Be and C Dopants and Vacancy Defects

Jia Li,Yonghui Du,Miao Zhang,Jian Zhang,Jiajia Mu,Lili Gao,Chao Zhang,Xing Dai,Yibo Ma

DOI: https://doi.org/10.1016/j.chemphys.2021.111441

IF: 2.552

2022-01-01

Chemical Physics

Abstract:Substitutional and interstitial beryllium (Be) and carbon (C) dopants, vacancies and anti-vacancy defects in twodimensional (2D) ultrathin hydrogenated cubic BN (c-BN) nanosheets (UHBNs) were studied using a first-principles method. Charge redistribution provides opportunities to use appropriate dopants and defects to redistribute charge and tailor the electronic properties of UHBNs to obtain p-/n-type semiconductors with narrow band gaps. Anti-vacancy defects have lower energy than the vacancy defects, which means that in the experimental synthetic preparation process, dislocation occupancy between atoms will be more likely to occur. The refractive index is lower, the speed of spread in these materials is expected to be faster than that in bulk BN, and the region of absorption shifts from ultraviolet to visible light. Our results present an exciting opportunity for making ultrathin BN nanosheets for next-generation optoelectronic nanomaterials.
Novel Boron Nitride Hollow Nanoribbons.

Zhi-Gang Chen,Jin Zou,Gang Liu,Feng Li,Yong Wang,Lianzhou Wang,Xiao-Li Yuan,Takashi Sekiguchi,Hui-Ming Cheng,Gao Qing Lu

DOI: https://doi.org/10.1021/nn8004922

IF: 17.1

2008-01-01

ACS Nano

Abstract:Novel BN hollow nanoribbons (BNHNRs) were fabricated by a simple ZnS nanoribbon templating method. Such BNHNRs have a distinct structure and show unique optical properties, as demonstrated from Raman, Fourier transform infrared spectroscopy, UV-vis spectroscopy, and cathodoluminescence spectroscopy, when compared with other forms of BN nanostructures. With high crystallinity, the BNHNRs exhibit an extraordinary ultraviolet CL emission at 5.33 eV. Such a property is highly advantageous for optoelectronic applications, particularly in the ultraviolet region, such as blue lasing and light emitting diodes. This templating method has also been extended to synthesize other hollow nanostructures such as boron carbonitride. This study represents a new methodology for fabricating hollow nanostructures with defined crystallinity and unique optical properties.
Tuning of the Optical, Electronic, and Magnetic Properties of Boron Nitride Nanosheets with Oxygen Doping and Functionalization

Qunhong Weng,Dmitry G. Kvashnin,Xi Wang,Ovidiu Cretu,Yijun Yang,Min Zhou,Chao Zhang,Dai‐Ming Tang,Pavel B. Sorokin,Yoshio Bando,Dmitri Golberg,Dai-Ming Tang

DOI: https://doi.org/10.1002/adma.201700695

IF: 29.4

2017-05-19

Advanced Materials

Abstract:Engineering of the optical, electronic, and magnetic properties of hexagonal boron nitride (h-BN) nanomaterials via oxygen doping and functionalization has been envisaged in theory. However, it is still unclear as to what extent these properties can be altered using such methodology because of the lack of significant experimental progress and systematic theoretical investigations. Therefore, here, comprehensive theoretical predictions verified by solid experimental confirmations are provided, which unambiguously answer this long-standing question. Narrowing of the optical bandgap in h-BN nanosheets (from ≈5.5 eV down to 2.1 eV) and the appearance of paramagnetism and photoluminescence (of both Stokes and anti-Stokes types) in them after oxygen doping and functionalization are discussed. These results are highly valuable for further advances in semiconducting nanoscale electronics, optoelectronics, and spintronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Electronic and magnetic properties of boron nitride nanoribbons with topological line defects

peizhe tang,xiaolong zou,shanying wang,jian wu,haitao liu,wenhui duan

DOI: https://doi.org/10.1039/c2ra20306e

IF: 4.036

2012-01-01

RSC Advances

Abstract:Spin-polarized first-principles calculations show that in contrast to pristine boron nitride nanoribbons (BNNRs), the hybrid BNNRs with topological line defects exhibit diverse electronic and magnetic properties. It is interesting to find that with no need for selective edge functionalization, hybrid BNNRs can exhibit half-metallicity and half-semi-metallicity, dependent on the type of edge and line defect. Furthermore, an applied tensile strain can tune the half-semi-metal gap and stabilize the ferromagnetic ordering of the ground state. For hybrid BNNRs with two zigzag edges saturated, the tailoring of line defect state makes the band gap smaller. This work provides a possibility of making spintronic devices based on hybrid BNNRs with line defects and an interesting way of fabricating metal-free half-metal.
Molecular Charge Transfer: A Simple and Effective Route To Engineer the Band Structures of BN Nanosheets and Nanoribbons

Qing Tang,Zhen Zhou,Zhongfang Chen

DOI: https://doi.org/10.1021/jp2067205

2011-09-02

The Journal of Physical Chemistry C

Abstract:The electronic properties of BN nanosheets and nanoribbons doped with organic molecules with strong electron-donating or accepting abilities were investigated by means of density functional theory computations. The interfacial charge transfer between BN nanosheets and the acceptor (tetracyanoquinodimethane, TCNQ) or donor (tetrathiafulvalene, TTF) molecule significantly reduces the intrinsic wide band gap of pristine BN nanosheets and consequently results in a p- or n-type semiconductor, respectively. Similar behavior is observed for both zigzag and armchair-edged BN nanoribbons. These findings suggest a simple and effective route to tune the electronic properties of BN materials in a wide range and also facilitate the design of BN-based molecular electronics.
Post-synthesis Carbon Doping of Individual Multiwalled Boron Nitride Nanotubes Via Electron-Beam Irradiation.

Xianlong Wei,Ming-Sheng Wang,Yoshio Bando,Dmitri Golberg

DOI: https://doi.org/10.1021/ja106134s

IF: 15

2010-01-01

Journal of the American Chemical Society

Abstract:We report on post-synthesis carbon doping of individual boron nitride nanotubes (BNNTs) via in situ electron-beam irradiation inside an energy-filtering 300 keV high-resolution transmission electron microscope. The substitution of C for B and N atoms in the honeycomb lattice was demonstrated through electron energy loss spectroscopy, spatially resolved energy-filtered elemental mapping, and in situ electrical measurements. Substitutional C doping transformed BNNTs from electrical insulators to conductors. In comparison with the existing post-synthesis doping methods for nanoscale materials (e.g., ion implantation and diffusion), the discovered electron-beam-induced doping is a well-controlled, little-damaging, room-temperature, and simple strategy that is expected to demonstrate great promise for post-synthesis doping of diverse nanomaterials in the future.
Boron/Nitrogen Pairs Co-Doping in Metallic Carbon Nanotubes: A First-Principle Study

Ouyang Fang-Ping,Peng Sheng-Lin,Chen Ling-Na,Sun Shu-Yuan,Xu Hui

DOI: https://doi.org/10.1088/1674-1056/20/2/027102

2011-01-01

Abstract:By using the first-principles calculations, the electronic structure and quantum transport properties of metallic carbon nanotubes with B/N pairs co-doping have been investigated. It is shown that the total energies of metallic carbon nanotubes are sensitive to the doping sites of the B/N pairs. The energy gaps of the doped metallic carbon nanotubes decrease with decreasing the concentration of the B/N pair not only along the tube axis but also around the tube. Moreover, the I-V characteristics and transmissions of the doped tubes are studied. Our results reveal that the conducting ability of the doped tube decreases with increasing the concentrations of the B/N pairs due to symmetry breaking of the system. This fact opens a new way to modulate band structures of metallic carbon nanotubes by doping B/N pair with suitable concentration and the novel characteristics are potentially useful in future applications

Tuning the Electron Transport Properties of Boron-Nitride Nanoribbons with Electron and Hole Doping

Tuning the Electronic and Magnetic Properties in Zigzag Boron Nitride Nanoribbons with Carbon Dopants

Half Metallicity along the Edge of Zigzag Boron Nitride Nanoribbons

Strain-induced Programmable Half-Metal and Spin-Gapless Semiconductor in an Edge-Doped Boron Nitride Nanoribbon

Structures and Electromagnetic Properties of Boron Nitride Nanoribbons Doped with Transition Metals

Prediction of Half Metallicity along the Edge of Boron Nitride Zigzag Nanoribbons

Carbon Doping Effects on the Electronic Structure of Boron Nitride

Tuning the magnetic and transport properties of boron-nitride nanotubes via oxygen-doping

Electron-Beam-Induced Substitutional Carbon Doping of Boron Nitride Nanosheets, Nanoribbons, and Nanotubes

TUNABLE ELECTRIC CONDUCTIVITIES OF Au-DOPED BORON NITRIDE NANOTUBES

Electronic Properties of Graphene Nanoribbon Doped by Boron/Nitrogen Pair: A First-Principles Study

Converting Metallic Single-Walled Carbon Nanotubes into Semiconductors by Boron/Nitrogen Co-Doping

Converting Metallic Single-Walled Carbon Nanotnbes Into Semiconductors By Boron/Nitrogen Co-Doping

Investigating geometries and electronic states of boron and nitrogen Co-doping graphene nanoribbons from a DFTB algorithm

Tuning the Electronic and Optical Properties of Two-Dimensional Hydrogenated C-Bn Nanosheets by Be and C Dopants and Vacancy Defects

Novel Boron Nitride Hollow Nanoribbons.

Tuning of the Optical, Electronic, and Magnetic Properties of Boron Nitride Nanosheets with Oxygen Doping and Functionalization

Electronic and magnetic properties of boron nitride nanoribbons with topological line defects

Molecular Charge Transfer: A Simple and Effective Route To Engineer the Band Structures of BN Nanosheets and Nanoribbons

Post-synthesis Carbon Doping of Individual Multiwalled Boron Nitride Nanotubes Via Electron-Beam Irradiation.

Boron/Nitrogen Pairs Co-Doping in Metallic Carbon Nanotubes: A First-Principle Study