Abstract:We report on the low-temperature electrical transport properties of large area boron and nitrogen codoped graphene layers (BNC). The temperature dependence of resistivity (5 K < T < 400 K) of BNC layers show semiconducting nature and display a band gap which increases with B and N content, in sharp contrast to large area graphene layers, which shows metallic behavior. Our investigations show that the amount of B dominates the semiconducting nature of the BNC layers. This experimental observations agree with the density functional theory (DFT) calculations performed on BNC structures similar in composition to the experimentally measured samples. In addition, the temperature dependence of the electrical conductivity of these samples displays two regimes: at higher temperatures, the doped samples display an Arrhenius-like temperature dependence thus indicating a well-defined band gap. At the lowest temperatures, the temperature dependence of the conductivity deviates from activated behavior and displays a conduction mechanism consistent with Mott's two-dimensional (2D) variable range hopping (2D-VRH). The ability to tune the electronic properties of thin layers of BNC by simply varying the concentration of B and N will provide a tremendous boost for obtaining materials with tunable electronic properties relevant to applications in solid state electronics.

TUNABLE ELECTRIC CONDUCTIVITIES OF Au-DOPED BORON NITRIDE NANOTUBES

Nano Au-decorated Boron Nitride Nanotubes: Conductance Modification and Field-Emission Enhancement

Purity and concentration dependence of piezoelectricity and thermal conductivity of boron nitride nanotubes

Metal-like single crystalline boron nanotubes: synthesis and in situ study on electric transport and field emission properties

Enhanced Electron Field Emission in B-doped Carbon Nanotubes

Converting Metallic Single-Walled Carbon Nanotubes into Semiconductors by Boron/Nitrogen Co-Doping

Converting Metallic Single-Walled Carbon Nanotnbes Into Semiconductors By Boron/Nitrogen Co-Doping

Tuning the magnetic and transport properties of boron-nitride nanotubes via oxygen-doping

Post-synthesis Carbon Doping of Individual Multiwalled Boron Nitride Nanotubes Via Electron-Beam Irradiation.

Tunable Electronic and Magnetic Properties of Graphene Flake-Doped Boron Nitride Nanotubes

Boron/Nitrogen Pairs Co-Doping in Metallic Carbon Nanotubes: A First-Principle Study

Carbon nanotubes with atomic impurities on boron nitride sheets under applied electric fields

Morphology and diameter controllable synthesis of boron nanowires

Band Gap Modification of Single-Walled Carbon Nanotube and Boron Nitride Nanotube under a Transverse Electric Field

Engineering the band gap of BN and BC2N nanotubes based on T-graphene sheets using a transverse electric field: Density functional theory study

A New Class of Boron Nanotube

Tuning of the Optical, Electronic, and Magnetic Properties of Boron Nitride Nanosheets with Oxygen Doping and Functionalization

Recent Advances in Boron Nitride Nanotubes and Nanosheets

Emission properties of boron and nitrogen doped ultrashort carbon nanotubes

Structural characterizations and electronic properties of boron nitride nanotube crystalline bundles.

Tunable electronics in large-area atomic layers of boron-nitrogen-carbon.