Abstract:Free-carrier effects in a p-type semiconductor including the intra-valence-band and inter-valence-band optical transitions are primarily responsible for its optical characteristics in infrared. Attention has been paid to the inter-valence-band transitions for the development of internal photoemission (IPE) mid-wave infrared (MWIR) photodetectors. The hole transition from the heavy-hole (HH) band to the spin-orbit split-off (SO) band has demonstrated potential applications for 3–5 μm detection without the need of cooling. However, the forbidden SO-HH transition at the Γ point (corresponding to a transition energy Δ0, which is the split-off gap between the HH and SO bands) creates a sharp drop around 3.6 μm in the spectral response of p-type GaAs/AlGaAs detectors. Here, we report a study on the optical characteristics of p-type GaAs-based semiconductors, including compressively strained InGaAs and GaAsSb, and a dilute magnetic semiconductor, GaMnAs. A model-independent fitting algorithm was used to derive the dielectric function from experimental reflection and transmission spectra. Results show that distinct absorption dip at Δ0 is observable in p-type InGaAs and GaAsSb, while GaMnAs displays enhanced absorption without degradation around Δ0. This implies the promise of using GaMnAs to develop MWIR IPE detectors. Discussions on the optical characteristics correlating with the valence-band structure and free-hole effects are presented.

Free Carrier Absorption in P-Type Epitaxial Si and GaAs Films for Far-Infrared Detection

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Application of Free Carrier Absorption for Far-Infrared Detection

Optical Properties of p-Type GaAs in Far-Infrared Region

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&Lt;title>high-Performance GaAs Homojunction Far-Infrared Detectors</title>

Terahertz absorption in AlGaAs films and detection using heterojunctions

GAAS HOMOJUNCTION INTERFACIAL WORKFUNCTION INTERNAL PHOTOEMISSION (HIWIP) FAR-INFRARED DETECTORS

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Demonstration of Si Homojunction Far-Infrared Detectors

Si Homojunction Internal Photoemission Far-Infrared Detectors

Study of band gap narrowing effect in n-GaAs for the application of far-infrared detection