Graphene/silicon-quantum-dots/Si Schottky-PN cascade heterojunction for short-wavelength infrared photodetection
Sichao Du,Zhenyi Ni,Xuemei Liu,Hongwei Guo,Ayaz Ali,Yang Xu,Xiaodong Pi
DOI: https://doi.org/10.1109/IEDM.2017.8268355
2017-01-01
Abstract:Due to limited short-wavelength infrared (SWIR) (1.1-2.5 μm) response of silicon (Si), germanium and indium-gallium-arsenide based photodetectors have dominated the commercial market of SWIR photodetectors for decades. However, they are often constrained by high-temperature processing, spectral range, flexible incompatibility, and cryogenic cooling accessories. Therefore, it is important to develop photodetectors that can be directly integrated with complementary-metal-oxide-semiconductor devices. In this work, we demonstrate a Si-based SWIR photodetector operating in the wavelength range from 800 to 1870 nm, with responsivity up to 0.6 A/W, and operation speed down to 15 p, s. By taking advantage of the fast photo-carriers transfer between graphene (Gr) and Si-quantum-dots (QDs), along with SWIR tunable Schottky-barrier height of Gr-Si junction, a novel Schottky-PN cascade heterojunction based photodetector has been demonstrated. The hyper-boron-doped SiQDs, interacting with the Gr-Si Schottky photodiode, effectively and fast harvest SWIR-excited charge-carriers. The cascade photodiode working at room temperature, with detectivity of 10
<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup>
Jones and sensitivity of 10
<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-13</sup>
W/Hz
<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">05</sup>
, manifests a promising prospect of our Si-based SWIR photodetector.