Si Homojunction Internal Photoemission Far-Infrared Detectors

AGU Perera,WZ Shen,HC Liu,M Buchanan,MO Tanner,KL Wang
DOI: https://doi.org/10.1117/12.318097
1998-01-01
Abstract:A novel 48 mu m cutoff wavelength (lambda(c)) Si far-infrared (FIR) detector is demonstrated. Internal photoemission over a Si interfacial work-function of a homojunction consisting of molecular beam epitaxy grown multilayers (p(+) emitter layers and intrinsic layers) is employed. The detector shows high responsivity over a wide wavelength range with a peak responsivity of 12.3 +/- 0.1 A/W at 27.5 mu m and detectivity D* of 6.6x10(10) cm root Hz/W at 4.2K. The lambda(c) and bias dependent quantum efficiency agree well with theory. Based on the experimental results and the model, Si FIR detectors (40 similar to 200 mu m) with high performance and tailorable lambda(c)s can be realized using higher emitter layer doping concentrations.
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