Abstract:We study the factors that determine photogenerated carriers and response wavelengths of photocurrents of long wavelength (∼14 μm) quantum well (QW) infrared photodetectors (QWIPs). The material structures of QWIPs are first characterized by the photoluminescence measurements (PL). By calculating the density of photogenerated carriers in the continuum above the energy barriers using the PL calibrated QWIP structures, we have demonstrated that due to the sample quality, the photocarriers can be either in miniband states (Bloch states in the multiple quantum wells), or they transport from one quantum well to the next in the form of running waves. By including possible scattering processes at the QWIP working temperature to link the theoretically calculated photocarrier density with the experimentally measured photocurrent, it is shown that the width of the photocurrent peaks of 14 μm GaAs/AlGaAs QWIPs under investigation is determined by the optical phonon emissions of photocarriers. We have further calculated the densities of photocarriers in the QWIPs reported in the literature. It is shown that the Bloch wave boundary conditions are appropriate for QWIPs with narrow QWs, whereas running wave boundary conditions are appropriate for wide QWs.

Demonstration of Far-Infrared GaAs/AlGaAs Quantum Well Photodetectors for Broadband Wavelength Detection

GaAs/AlGaAs Quantum Well Photodetectors with a Cutoff Wavelength at 28 Μm

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35 μm cutoff bound-to-quasibound and bound-to-continuum InGaAs QWIPs

Short Wavelength (1–4 Μm) Infrared Detectors Using Intersubband Transitions in GaAs-based Quantum Wells

Development of a Long Wavelength Two-Color Al1Ga1-xAs/GaAs Quantum Well Infrared Photo-Detector

Study on Grating'Coupling Very Long Wavelength Gaas/Algaas Qwip

Photocurrents of 14 Μm Quantum-Well Infrared Photodetectors

The Theory and Experiment of Very-Long-wavelength 256×1 GaAs/Al X Ga1−x As Quantum Well Infrared Detector Linear Arrays

Long-wavelength 640/spl Times/486 GaAs-AlGaAs Quantum Well Infrared Photodetector Snap-Shot Camera

Real-time, chirped-pulse heterodyne detection at room-temperature with 100GHz 3dB-bandwidth mid-infrared quantum-well photodetectors

High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

Demonstration of Si Homojunction Far-Infrared Detectors

Enhanced response over wavelength range of 7-12 µm for quantum wells in asymmetric micro-pillars

High-responsivity operation of quantum cascade detectors at 9 µm

Photocurrent Spectra of Very Long Wavelength GaAs/AlGaAs Quantum Well Infrared Photodetector

GaAs Homojunction Far-Infrared Detectors for Astronomy Applications

A GaN/AlN Quantum Cascade Detector with a Broad Response from the Mid-Infrared (4.1 Μ M) to the Visible (550 Nm) Spectral Range

Photoelectric properties of two-color GaAs/GaAlAs quantum well infrared photodetectors

Near‐room‐temperature Photon‐noise‐limited Quantum Well Infrared Photodetector