Development of a Long Wavelength Two-Color Al1Ga1-xAs/GaAs Quantum Well Infrared Photo-Detector

齐利芳,李献杰,赵永林,尹顺政,蔡道民,李宁,甄红楼,熊大元,陆卫

DOI: https://doi.org/10.3969/j.issn.1671-4776.2009.07.003

2009-01-01

Abstract:The design,processing and measurement for a long wavelength two-color AlxGa1-xAs/GaAs quantum well infrared photo-detector were described.The unit structure of the photo-detector is 300 μm×300 μm.The peaks of the responsivity spectra are 10.8 μm and 11.6 μm.Using the vertical incident light,the measured dark currents of the two multi-quantum-well zones are 4.23×10-6,4.19×10-6A with a bias voltage of 2 V at 65 K,respectively.The blackbody detectivities are 1.5×109,6.7×109 cm·Hz1/2/W and the responsivities are 0.063,0.282 A/W,respectively.The AlGaAs/GaAs quantum well infrared photo-detector(QWIP)has obvious advantages in developing a large format and multiple color focal plane array due to the mature GaAs material growth and process technology,good uniformity,low cost and small optics crosstalk between the different wave bands.