GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates
DK Sengupta,W Fang,JI Malin,J Li,T Horton,AP Curtis,KC Hsieh,SL Chuang,H Chen,M Feng,GE Stillman,L Li,HC Liu,KMSV Bandara,SD Gunapala,WI Wang
DOI: https://doi.org/10.1063/1.119473
IF: 4
1997-01-01
Applied Physics Letters
Abstract:In this letter, we describe the characteristics of molecular beam epitaxy GaAs/AlGaAs quantum-well infrared photodetectors (QWIP’s) grown on a GaAs substrate, and on a GaAs-on-Si substrate produced by metalorganic chemical-vapor deposition. Important issues for QWIP applications such as dark current, spectral response, and absolute responsivity are studied. We find that compared to a similar detector structure grown on a GaAs substrate, the detector grown on a GaAs-on-Si substrate exhibits similar dark current and absolute responsivity while displaying a small blueshift in the spectral response.