InP-based High-Performance Extended Short Wavelength P-B-n Infrared Photodetector with InGaAs/GaAsSb Type-Ii Superlattice Absorption Layer
Yan Liang,Wenguang Zhou,Xiangyu Zhang,Faran Chang,Nong Li,Yifan Shan,Ye Zhang,Fan Ye,Chuanbo Li,Xiangbin Su,Chengao Yang,Hongyue Hao,Guowei Wang,Dongwei Jiang,Donghai Wu,Haiqiao Ni,Yingqiang Xu,Zhichuan Niu,Youdou Zheng,Yi Shi
DOI: https://doi.org/10.1063/5.0223557
IF: 4
2024-01-01
Applied Physics Letters
Abstract:High-performance p-B-n infrared photodetectors based on In0.53Ga0.47As/Ga-0.51 As0.49Sb type-II superlattices with an Al0.85Ga0.15AsSb barrier on an InP substrate have been demonstrated. These photodetectors exhibit 50% and 100% cutoff wavelengths of similar to 2.1 mu m and similar to 2.6 mu m, respectively. At a bias voltage of -100 mV bias voltage, the device exhibits a peak responsivity of 0.618 A/W at 2.1 mu m, corresponding to a quantum efficiency of 36.5%. The device exhibits a saturated dark current shot noise limited specific detectivity (D*) of 4.12 x 10(10 )cmHz(1/2)/W (at a peak responsivity of 2.1 mu m) under -100 mV applied bias at 300 K.