Abstract:Thin‐film semiconductors offer attractive opportunities for achieving optoelectronic functionalities that are not easily accessible with conventional bulk semiconductors. This paper presents a tunable dual‐band photodetector for multispectral sensing in the visible to short‐wave infrared range. Organic and inorganic colloidal quantum dot absorbers are integrated into a single vertically stacked structure to leverage the best features of both material systems.Multispectral imaging in short‐wave infrared (SWIR) is a powerful analytical technique because of the distinctive spectral properties of many materials in this range. However, conventional SWIR image sensors are beyond the reach of many applications due to their high price. Image sensors based on colloidal quantum dots (CQDs) are expected to deliver affordable infrared image sensors to wider application scope. So far, the demonstrated CQD image sensors do not have a multispectral capability. Here, a dual‐band photodetector based on PbS CQDs is presented. By engineering the surface of CQDs, two oppositely facing pn junctions are fabricated in series, which enable sensing in two spectral channels. Furthermore, an optical cavity is designed that reduces the spectral crosstalk between the two channels and simultaneously enables wavelength‐tunability in one channel. Finally, an organic photodiode (OPD) is integrated with a PbS CQD photodiode in a single device, leveraging a high sensitivity in visible and near‐infrared (NIR) characteristics for OPDs. The presented photodetectors exhibit low dark current below 500 nA cm−2 at 1 V bias, a fast response measured in microseconds, as well as high external quantum efficiency, reaching 70% in NIR and 30% in SWIR.

Integration of N-Type and P-Type Quantum-Well Infrared Photodetectors for Sequential Multicolor Operation

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

Photoelectric properties of two-color GaAs/GaAlAs quantum well infrared photodetectors

A Voltage-Controlled Tunable Two-Color Infrared Photodetector Using Gaas/Alas/Gaalas and Gaas/Gaalas Stacked Multiquantum Wells

High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices

Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems

InP-based High-Performance Extended Short Wavelength P-B-n Infrared Photodetector with InGaAs/GaAsSb Type-Ii Superlattice Absorption Layer

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

Dual-color charge-sensitive infrared phototransistors with dynamic optical gate

Universal Homojunction Design for Colloidal Quantum Dot Infrared Photodetectors

High-performance InP-based bias-tunable near-infrared /extended-short wave infrared dual-band photodetectors

Integration of MoS 2 with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

A Sensitive Double Quantum Well Infrared Phototransistor

A GaN/AlN Quantum Cascade Detector with a Broad Response from the Mid-Infrared (4.1 Μ M) to the Visible (550 Nm) Spectral Range

Quantum-Tuned Cascade Multijunction Infrared Photodetector

Multi-bands Photoconductive Response in AlGaN/GaN Multiple Quantum Wells

Monolithic Integration of a SiGe/Si Modulator and Multiple Quantum Well Photodetector for 1.55 Μm Operation

Pixelless thermal imaging with integrated quantum-well infrared photodetector and light-emitting diode

Multicolor Broadband and Fast Photodetector Based on InGaAs–Insulator–Graphene Hybrid Heterostructure

Photodetectors Based on Lead Sulfide Quantum Dot and Organic Absorbers for Multispectral Sensing in the Visible to Short‐Wave Infrared Range