Near- And Mid-Infrared Detection Using Gaas/Inxga1-Xas/Inyga1-Yas Multiple Step Quantum Wells

michael touse,gamani karunasiri,kevin r lantz,hu li,ting mei

DOI: https://doi.org/10.1063/1.1871350

IF: 4

2005-01-01

Applied Physics Letters

Abstract:A dual-band multiple-quantum-well infrared photodetector capable of simultaneously detecting wavelengths near 0.9 mu m and 10 mu m has been fabricated using GaAs/InGaAs step quantum wells. The detection of the near (0.82-0.95 mu m)- and mid (9-11 mu m)-infrared wavelength bands was achieved using interband and intersubband transitions. The measured peak responsivities of the near- and mid-infrared bands were 0.4 A/W and 1 A/W respectively, at 0.8 V bias across the device. The broken symmetry of the step quantum well allows transitions from the ground states of heavy and light holes to the first-excited electron state allowing the photoexcited carriers to be efficiently collected. The estimated values of the detectivities for near- and mid-infrared bands at 40 K and 0.8 V bias are approximately 4.5 x 10(9) cm(Hz)(1/2)/W and 1.1 X 10(10) cm(Hz)(1/2)/W, respectively. (C) 2005 American Institute of Physics.