Abstract:We study the factors that determine photogenerated carriers and response wavelengths of photocurrents of long wavelength (∼14 μm) quantum well (QW) infrared photodetectors (QWIPs). The material structures of QWIPs are first characterized by the photoluminescence measurements (PL). By calculating the density of photogenerated carriers in the continuum above the energy barriers using the PL calibrated QWIP structures, we have demonstrated that due to the sample quality, the photocarriers can be either in miniband states (Bloch states in the multiple quantum wells), or they transport from one quantum well to the next in the form of running waves. By including possible scattering processes at the QWIP working temperature to link the theoretically calculated photocarrier density with the experimentally measured photocurrent, it is shown that the width of the photocurrent peaks of 14 μm GaAs/AlGaAs QWIPs under investigation is determined by the optical phonon emissions of photocarriers. We have further calculated the densities of photocarriers in the QWIPs reported in the literature. It is shown that the Bloch wave boundary conditions are appropriate for QWIPs with narrow QWs, whereas running wave boundary conditions are appropriate for wide QWs.

GaAs/AlGaAs Quantum Well Photodetectors with a Cutoff Wavelength at 28 Μm

Far-Infrared (Lambda(C)=28.6 Mu M) Gaas Algaas Quantum Well Photodetectors

Demonstration of Far-Infrared GaAs/AlGaAs Quantum Well Photodetectors for Broadband Wavelength Detection

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

35 μm cutoff bound-to-quasibound and bound-to-continuum InGaAs QWIPs

Study on Grating'Coupling Very Long Wavelength Gaas/Algaas Qwip

Short Wavelength (1–4 Μm) Infrared Detectors Using Intersubband Transitions in GaAs-based Quantum Wells

High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

Development of a Long Wavelength Two-Color Al1Ga1-xAs/GaAs Quantum Well Infrared Photo-Detector

Photocurrent Spectra of Very Long Wavelength GaAs/AlGaAs Quantum Well Infrared Photodetector

Long-wavelength 640/spl Times/486 GaAs-AlGaAs Quantum Well Infrared Photodetector Snap-Shot Camera

Photocurrents of 14 Μm Quantum-Well Infrared Photodetectors

Two-photon Intersubband Transitions in Quantum Well Infrared Photoconductors

Photoelectric properties of two-color GaAs/GaAlAs quantum well infrared photodetectors

The Theory and Experiment of Very-Long-wavelength 256×1 GaAs/Al X Ga1−x As Quantum Well Infrared Detector Linear Arrays

Very High Quantum Efficiency in InAs/GaSb Superlattice for Very Long Wavelength Detection with Cutoff of 21 Μm

A Sensitive Double Quantum Well Infrared Phototransistor

High-responsivity operation of quantum cascade detectors at 9 µm

Near- And Mid-Infrared Detection Using Gaas/Inxga1-Xas/Inyga1-Yas Multiple Step Quantum Wells

Very long wave infrared quantum cascade detector with a twin-well absorption region

Photoresponse of InGaAs/GaAs multiple-period very-long-wavelength quantum well infrared photodetectors