Recent Progress in Mid- and Far-Infrared Semiconductor Detectors

W. Z. Shen
DOI: https://doi.org/10.1023/A:1006758500042
2000-01-01
International Journal of Infrared and Millimeter Waves
Abstract:The recent developments of semiconductor infrared detectors in extending the wavelength coverage and improving the focal plane array (FPA) performance are reviewed. The emphasis is on the GeSi/Si heterojunction infrared photoemission detectors (HIPs), GaAs/AlGaAs quantum well infrared photodetecots (QWIPs), Si, Ge and GaAs blocked impurity band detectors (BIBS), and Si and GaAs homojunction interfacial work-function internal photo-emission (HIWIP) far-infrared (FIR) detectors. The advantages, current status, and potential limitations of these infrared detectors have also been discussed.
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