Progress on Si-based Near-infrared Light Detectors

SHI Wen-hua,WANG Qi-ming

DOI: https://doi.org/10.3969/j.issn.1001-5868.2005.06.001

2005-01-01

Abstract:The latest progresses about Si-based near-infrared light detectors are presented.Material used as the absorption layer and the structure of detectors are discussed.Their development and applications are also prospected.

What problem does this paper attempt to address?

Recent Progress on Infrared Photodetectors Based on InAs and InAsSb Nanowires

Tengfei Xu,Hailu Wang,Xiaoyao Chen,Man Luo,Lili Zhang,Yueming Wang,Fansheng Chen,Chongxin Shan,Chenhui Yu

DOI: https://doi.org/10.1088/1361-6528/ab8591

IF: 3.5

2020-01-01

Nanotechnology

Abstract:In recent years, quasi-1D semiconductor nanowires have attracted significant research interest in the field of optoelectronic devices. Indium arsenide (InAs) nanowire, a III–V compound semiconductor structure with a narrow band gap, shows high electron mobility and high absorption from the visible to the mid-wave infrared (MWIR), holding promise for room-temperature high-performance infrared photodetectors. Therefore, the material growth, device preparation and performance characteristics have attracted increasing attention, enabling high-sensitivity InAs nanowire photodetector from the visible to the MWIR at room temperature. This review starts by discussing the growth process of the low-dimensional structure and elementary properties of the material, such as the crystalline phase, mobility, morphology, surface states and metal contacts. Then, three solutions, including the visible-light-assisted infrared photodetection technology, vertical nanowire-array technology and band engineering by the growth of InAsSb nanowires with increasing Sb components, are elaborated to obtain longer cut-off wavelength MWIR photodetectors based on single InAs nanowire and its heterojunction structure. Finally, the potential and challenges of the state-of-the-art optoelectronic technologies for InAs nanowire MWIR photodetectors are summarized and compared, and preliminary suggestions for the technical development route and prospects are presented. This review mainly delineates the research progress of material growth, device fabrication and performance characterization of InAs nanowire MWIR photodetectors, providing a reference for the development of the next-generation high-performance photodetectors over a wide spectrum range.
The Research Progress of Si-based Blocked-Impurity-band Infrared Detecting Materials and Detectors

Zhu JiaQi,Zhu He,Xu HanLun,Wang Yao,Chen YanSong,Liu MengJuan,Wu HuiZhen

DOI: https://doi.org/10.1360/sspma-2020-0306

2021-01-01

Abstract:Infrared detection possesses a significantly application prospect in the field of astrophysics. Due to the special natures of deep-space exploring objects, the performance of infrared detector is very demanding. Blocked-impurity-band (BIB) infrared detectors, with advantages of wide spectrum coverage, low noise, high sensitivity, good resistance to cosmic particle radiation etc., have become the state-of-the-art choice for astronomical application internationally. The response of BIB detectors ranges from mid-infrared to far-infrared waveband, and the widespread use of BIB detectors help human beings obtain a series of important scientific achievements in the field of deep-space exploration. The research on BIB infrared detector in China started rather late. Even though big progress has been achieved in recent years, it still lags far behind the advanced level globally. This article reviews the research progress for BIB infrared detectors of China in the past 5 years. The preparation technology, physical property characterization, photoelectric response characteristics of BIB infrared detection material and corresponding devices, and the control of surface plasmon polaritons on the photoelectric response of the detectors are introduced detailly. These provide references and experimental bases for the development of BIB infrared detector in China.
Deep-Level Impurity Enabled Planar Filterless Narrowband Near-Infrared Si Photodetector

Jia-Le Xing,Yu-Jian Liu,Yi-Meng Gao,Mo-Lin Wang,Guang-Bin Zhang,Chun-Yan Wu,Zhi-Guo Zhu,Xiang Zhang,Feng-Xia Liang,Lin-Bao Luo,Li Wang

DOI: https://doi.org/10.1109/led.2024.3351836

IF: 4.8157

2024-01-01

IEEE Electron Device Letters

Abstract:Near-infrared narrowband photodetectors are extensively used in fire alarms, industrial process control, diagnosis of heating systems, etc., owing to their strong anti-interference ability and high thermal sensitivity. In this study, a near-infrared narrowband Si photodetector with a simple Schottky structure was developed via deep-level Au-atom doping to control the recombination processes of the photogenerated carriers. The wavelength selectivity and sensitivity of the device were effectively tuned by modulating both the doping temperature and incident angle. Its peak detectivity at 1080 nm was 1.84 × 1012 Jones with a full-width at half-maximum of 101 nm, and the −3 dB bandwidth of the device was estimated to be 4.6 kHz (rise time of 22 μs and fall time of 74 μs). Furthermore, owing to its planar structure and simple fabrication process, the present narrowband photodetector can be easily combined with other broadband photodiodes to effectively map the high-temperature area of a target object and provide further temperature-gradient change information. This study opens up a new avenue for developing planar-type narrowband photodetectors suitable for on-chip application in next-generation near-infrared optoelectronic systems.
THE PROGRESSES IN THE STUDY ON Si BASED HETEROSTRUCTURE MATERIALS FOR PHOTODETECTOR

Meicheng Li

1999-01-01

Abstract:The principles, the characteristics, the recent situation and development trends of several advanced materials for photodetector: GeSi/Si, GaAs/GaAlAs, HgCdTe, PtSi and GaN were described. In particular, it would be very attractive to Si based GeSi superlattice material grown by MBE. Si based heterostructure quantum well material is becoming a patential new material for photodetectors.
Recent Progress of Infrared Photodetectors Based on Lead Chalcogenide Colloidal Quantum Dots

Jinming Hu,Yuansheng Shi,Zhenheng Zhang,Ruonan Zhi,Shengyi Yang,Bingsuo Zou

DOI: https://doi.org/10.1088/1674-1056/28/2/020701

2019-01-01

Chinese Physics B

Abstract:Commercial photodetectors based on silicon are extensively applied in numerous fields. Except for their high performance, their maximum absorption wavelength is not over than 1100 nm and incident light with longer wavelengths cannot be detected; in addition, their cost is high and their manufacturing process is complex. Therefore, it is meaningful and significant to extend absorption wavelength, to decrease cost, and to simplify the manufacturing process while maintaining high performance for photodetectors. Due to the properties of size-dependent bandgap tunability, low cost, facile processing, and substrate compatibility, solution-processed colloidal quantum dots (CQDs) have recently gained significant attention and become one of the most competitive and promising candidates for optoelectronic devices. Among these CQDs, lead chalcogenide CQDs are getting very prominent and are widely investigated. In this paper, the recent progress of infrared (IR) photodetectors based on lead sulfide (PbS), lead selenide (PbSe), and ternary PbSxSe1-x CQDs, and their underlying concepts, breakthroughs, and remaining challenges are reviewed, thus providing guidance for designing high-performance quantum-dot IR photodetectors.
High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Jianghong Wu,Maoliang Wei,Jianglong Mu,Hui Ma,Chuyu Zhong,Yuting Ye,Chunlei Sun,Bo Tang,Lichun Wang,Junying Li,Xiaomin Xu,Bilu Liu,Lan Li,Hongtao Lin

DOI: https://doi.org/10.1021/acsnano.1c04359

IF: 17.1

2021-01-01

ACS Nano

Abstract:Due to the excellent electrical and optical properties and their integration capability without lattice matching requirements, low-dimensional materials have received increasing attention in silicon photonic circuits. Bi2O2Se with high carrier mobility, narrow bandgap, and good air stability is very promising for high-performance near-infrared photodetectors. Here, the chemical vapor deposition method is applied to grow Bi2O2Se onto mica, and our developed polycarbonate/polydimethylsiloxane-assisted transfer method enables the clean and intact transfer of Bi2O2Se on top of a silicon waveguide. We demonstrated the Bi2O2Se/Si waveguide integrated photodetector with a small dark current of 72.9 nA, high responsivity of 3.5 A·W-1, fast rise/decay times of 22/78 ns, and low noise-equivalent power of 15.1 pW·Hz-0.5 at an applied voltage of 2 V in the O-band for transverse electric modes. Additionally, a microring resonator is designed for enhancing light-matter interaction, resulting in a wavelength-sensitive photodetector with reduced dark current (15.3 nA at 2 V) and more than a 3-fold enhancement in responsivity at the resonance wavelength, which is suitable for spectrally resolved applications. These results promote the integration of Bi2O2Se with a silicon photonic platform and are expected to accelerate the future use of integrated photodetectors in spectroscopy, sensing, and communication applications.
Recent Progress in Mid- and Far-Infrared Semiconductor Detectors

W. Z. Shen

DOI: https://doi.org/10.1023/A:1006758500042

2000-01-01

International Journal of Infrared and Millimeter Waves

Abstract:The recent developments of semiconductor infrared detectors in extending the wavelength coverage and improving the focal plane array (FPA) performance are reviewed. The emphasis is on the GeSi/Si heterojunction infrared photoemission detectors (HIPs), GaAs/AlGaAs quantum well infrared photodetecots (QWIPs), Si, Ge and GaAs blocked impurity band detectors (BIBS), and Si and GaAs homojunction interfacial work-function internal photo-emission (HIWIP) far-infrared (FIR) detectors. The advantages, current status, and potential limitations of these infrared detectors have also been discussed.
Development of Far-Infrared Semiconductor Detectors

Wen Zhong Shen

DOI: https://doi.org/10.1109/icimw.2000.893005

2002-01-01

Abstract:The recent developments of semiconductor Si, Ge and GaAs blocked impurity band detectors (BIBs), and Si and GaAs homojunction interfacial work-function internal photoemission (HIWIP) far-infrared (FIR) detectors in extending the wavelength coverage and improving the focal plane array (FPA) performance are reviewed. The advantages, current status, and potential limitations of these FIR detectors are also discussed.
All-silicon photovoltaic detectors with deep ultraviolet selectivity

Yuqiang Li,Wei Zheng,Feng Huang

DOI: https://doi.org/10.1186/S43074-020-00014-W

IF: 16.5

2020-01-01

PhotoniX

Abstract:For a practical photodetector, fast switching speed and high on-off ratio are essential, and more importantly, the integration capability of the device finally determines its application level. In this work, the judiciously engineered Si 3 N 4 /Si detector with an open-circuit voltage of 0.41 V is fabricated by chemical vapor deposition methods, and exhibits good performance with repeatability. The advanced integration technology of Si 3 N 4 and Si is the foundation for imaging functions in the near future. Compare to the current commercial Si p-i-n photodiodes, the detector cuts off the long-wavelength UV light over 260 nm, realizing the spectrum selectivity without filters or complexed accessories. The stability of this detector is further characterized by cycling response, temperature and light intensity dependence tests. In addition, we also analyze and explain the inherent mechanisms that govern the different operations of two types of Si 3 N 4 /Si photodetectors.
Si/Organic Integrated Narrowband Near-Infrared Photodetector

Zhuhua Xu,Chuying Sun,Siyi Min,Zilong Ye,Cong Zhao,Jingzhou Li,Zhenghao Liu,Youdi Liu,Wen-Di Li,Man-Chung Tang,Qinghua Song,H. Y. Fu,Feiyu Kang,Jiangyu Li,Yang Shen,Cunjiang Yu,Guodan Wei

DOI: https://doi.org/10.1002/smll.202302072

IF: 13.3

2023-01-01

Small

Abstract:Spectrally selective narrowband photodetection is critical for near-infrared (NIR) imaging applications, such as for communicationand night-vision utilities. It is a long-standing challenge for detectors based on silicon, to achieve narrowband photodetection without integrating any optical filters. Here, this work demonstrates a NIR nanograting Si/organic (PBDBT-DTBT:BTP-4F) heterojunction photodetector (PD), which for the first time obtains the full-width-at-half-maximum (FWHM) of only 26 nm and fast response of 74 & mu;s at 895 nm. The response peak can be successfully tailored from 895 to 977 nm. The sharp and narrow response NIR peak is inherently attributed to the coherent overlapping between the NIR transmission spectrum of organic layer and diffraction enhanced absorption peak of patterned nanograting Si substrates. The finite difference time domain (FDTD) physics calculation confirms the resonant enhancement peaks, which is well consistent with the experiment results. Meanwhile, the relative characterization indicates that the introduction of the organic film can promote carrier transfer and charge collection, facilitating efficient photocurrent generation. This new device design strategy opens up a new window in developing low-cost sensitive NIR narrowband detection.
Recent developments of infrared photodetectors with low-dimensional inorganic nanostructures

Xin Hu,Jianghong Wu,Mingzhou Wu,Junqing Hu

DOI: https://doi.org/10.1007/s12274-021-3634-2

IF: 9.9

2021-08-04

Nano Research

Abstract:Low-dimensional inorganic nanostructures such as quantum dots as well as one- and two-dimensional nanostructures are widely studied and already used in high-performance infrared photodetectors. These structures feature large surface-to-volume ratios, tunable light absorption, and electron-limiting effects. This article reviews the state-of-the-art research of low-dimensional inorganic nanostructures and their application for infrared photodetection. Thanks to nano-structuring, a narrow bandgap, hybrid systems, surface-plasmon resonance, and doping, many common semiconductors have the potential to be used for infrared detection. The basic approaches towards infrared detection are summarized. Furthermore, a selection of very important and special nanostructured materials and their remarkable infrared-detection properties are introduced (e.g., black phosphorus, graphene-based, MoX2-based, III–VII group). Each section in this review describes the corresponding photosensitive properties in detail. The article concludes with an outlook of anticipated future developments in the field.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Silicon nanowires array capped with two shells as light-absorption antenna for self-driven broadband photodetectors

Ying Wu,Shengyi Yang,Feiyang Sun,Xiaoxuan Liu,Zhenheng Zhang,Yi Tang,Yurong Jiang,Bingsuo Zou

DOI: https://doi.org/10.1063/5.0156924

IF: 4

2023-07-31

Applied Physics Letters

Abstract:Silicon (Si) is one of the most important semiconductor materials, and Si in nanoscale has a direct bandgap; therefore, it can overcome the issues of poor light absorption for its bulk counterpart [Lu et al., Appl. Phys. Lett. 91, 263107 (2007)]. Currently, much interest is focusing on Si nanowires array (Si-NWA) for its unique characteristics, such as the enhanced light absorption and the superior electronic mobility, for photodetectors and solar cells [Ko et al., Mater. Sci. Semicond. Process. 33, 154–160 (2015) and Xie et al., ACS Nano 8, 4015–4022 (2014)]. Si-NWA or pyramid Si based photodetectors usually show higher performance than those based on the Si wafer due to the enhanced light absorption and the radial heterojunction [Coskun et al., Physica B 604, 412669 (2021) and Xiao et al., Adv. Mater. 30, 1801729 (2018)]. However, the light absorption spectrum of Si-NWA is limited within the near-infrared region, and its surface defects reduce the carriers' lifetime.

physics, applied
Highly Sensitive Narrowband Si Photodetector With Peak Response at Around 1060 nm

Li Wang,Hehao Luo,Huanhuan Zuo,Jiqing Tao,Yongqiang Yu,Xiaoping Yang,Molin Wang,Jigang Hu,Chao Xie,Di Wu,Linbao Luo

DOI: https://doi.org/10.1109/ted.2020.3001245

IF: 3.1

2020-08-01

IEEE Transactions on Electron Devices

Abstract:Photodetection at a wavelength of about 1060 nm is very important for applications including medical imaging, optical communication, and light detection and ranging. In this article, a self-powered near-infrared light detector with a narrowband at around 1060 nm is realized based on a simple Si Schottky structure, in which the Ohmic and Schottky electrodes are configured on the front and rear surfaces of the Si substrate, respectively. The as-assembled device exhibits a tunable peak response near 1060 nm with a full width at half maximum of 107 nm, which could be due to the combined effect of the narrow photo-current generation and the self-filtering effect of the silicon substrate. At zero bias, a specific detectivity of $sim 1times 10^{11}$ Jones and linear dynamic range about 101 dB are achieved, in spite of the weak absorption of Si at this wavelength. The external quantum efficiency can be improved to 135% under a low bias of −1 V, indicating the existence of gain mechanism during photodetection. Finally, it is also found that the as-assembled near-infrared device shows excellent antiinterference capability during the photodetection process. These results corroborate that the present Si photodetector may find promising application in future near-infrared optoelectronic devices and systems.

engineering, electrical & electronic,physics, applied
A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

He Wang,Zhenzhen Kong,Jiale Su,Ben Li,Yijie Wang,Yuanhao Miao,Ziwei Zhou,Xuewei Zhao,Qin Hu,Henry H. Radamson

DOI: https://doi.org/10.1021/acsanm.3c02607

IF: 6.14

2023-08-17

ACS Applied Nano Materials

Abstract:As a representative of new semiconductor nanostructured materials, the Si0.7Ge0.3/Si multilayers have received extensive attention for electronic and photonic applications. We fabricated an uncooled detector consisting of a four-period intrinsic Si0.7Ge0.3/Si multilayer as an active part and two p-type doped electrodes (a PIP profile) for long wavelength infrared detection. The strain in the SiGe/Si multilayer was characterized globally by high-resolution X-ray diffraction (HRXRD) and locally by nanobeam diffraction (NBD) in a high-resolution transmission electron microscope. The performance of detectors was characterized by the temperature coefficient of resistance (TCR), voltage noise power spectral density, and dark current measurement. The detectors with graphene on the top electrode show an improvement for TCR from −2.65%/K to −3.94%/K. Based on our results, the SiGe/Si multilayer structure is an excellent thermal imaging material due to its excellent thermal response as well as its CMOS compatibility.

materials science, multidisciplinary,nanoscience & nanotechnology
Research progress of quantum dot enhanced silicon-based photodetectors

Zhu Xiao-xiu,Ge Yong,Li Jian-jun,Zhao Yue-jin,Zou Bing-suo,Zhong Hai-zheng

DOI: https://doi.org/10.3788/CO.20201301.0062

IF: 1.1

2020-01-01

Chinese Optics

Abstract:Silicon-based photodetectors have been widely investigated due to their high reliability, easy integration and low cost. With the development of artificial intelligence and autonomous vehicles, research and performance enhancement of silicon-based photodetectors is an important field of research. Quantum dots are excellent light-conversion and light-modulation materials due to their superior absorption coefficient, tunable spectra, high photoluminescence quantum yield and simple integration. The tunable light absorption and photoluminesence properties of quantum dots make them suitable materials for enhancing the detection. Quantum dots enhanced silicon-based photodetectors are emerging as a new technique to advance the performance of detection and imaging. In particular, they show potential to expand the functionality of CCD and CMOS devices and further satisfy increasing demands for detection. In this review, we summarized the progress of quantum dot-enhanced silicon-based photodetectors in the field of ultraviolet detection, infrared imaging, polarization detection and spectral detection, hoping to attract the attentions of domestic colleagues
On‐Chip Room‐Temperature Operated Short‐Wavelength‐Infrared Si:S Photodetector with a Vertical Junction

Yunlong Xiao,Ke Deng,Kun Zhang,Xiangbao Xu,Qing Li,Tao Zhang,Jiaxiang Guo,Hangyu Lu,Peng Wang,Weida Hu

DOI: https://doi.org/10.1002/adfm.202409354

IF: 19

2024-07-19

Advanced Functional Materials

Abstract:In this study, the doping of deep‐level element sulfur (S) is synergized with the device architecture incorporating a blocked impurity band (BIB) to fabricate an advanced infrared detector. The S‐doped Si (Si:S) BIB detector exhibited excellent short‐wave infrared detection performance. The multi‐scenario application demonstrations further confirmed its potential for practical use. Silicon (Si)‐based photodetectors are cost‐effective, eco‐friendly, and compatible with on‐chip complementary metal‐oxide‐semiconductor (CMOS) technology. However, expanding their photoresponse into the short‐wavelength‐infrared region beyond 1.1 μm remains challenging because of the intrinsic bandgap of Si. In this study, an ion implantation sulfur‐doped Si‐based infrared photodetector featuring a blocked impurity band (BIB) structure is investigated. The detector achieves an extended sub‐bandgap infrared response up to 2 μm through impurity band transitions, facilitated by the artificial creation of a deep‐level impurity band within the Si bandgap. The device exhibited a competitive photodetection effect with a high responsivity of 107.3 mA W−1 and an external quantum efficiency of 10.2%. Notably, the detector yielded an enhanced response speed with a raising time of 46 μs and a decay time of 135 μs at 1310 nm under room temperature. Finally, the versatile applications of this detector is presented in a multitude of scenarios encompassing material composition identification, multi‐band imaging, and optical communication. The proposed investigation not only proposed a method for Si‐based infrared detectors but also constituted a contribution to the advancement of silicon photonics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Recent Progress in Improving the Performance of Infrared Photodetectors via Optical Field Manipulations

Jian Chen,Jiuxu Wang,Xin Li,Jin Chen,Feilong Yu,Jiale He,Jian Wang,Zengyue Zhao,Guanhai Li,Xiaoshuang Chen,Wei Lu

DOI: https://doi.org/10.3390/s22020677

IF: 3.9

2022-01-16

Sensors

Abstract:Benefiting from the inherent capacity for detecting longer wavelengths inaccessible to human eyes, infrared photodetectors have found numerous applications in both military and daily life, such as individual combat weapons, automatic driving sensors and night-vision devices. However, the imperfect material growth and incomplete device manufacturing impose an inevitable restriction on the further improvement of infrared photodetectors. The advent of artificial microstructures, especially metasurfaces, featuring with strong light field enhancement and multifunctional properties in manipulating the light–matter interactions on subwavelength scale, have promised great potential in overcoming the bottlenecks faced by conventional infrared detectors. Additionally, metasurfaces exhibit versatile and flexible integration with existing detection semiconductors. In this paper, we start with a review of conventionally bulky and recently emerging two-dimensional material-based infrared photodetectors, i.e., InGaAs, HgCdTe, graphene, transition metal dichalcogenides and black phosphorus devices. As to the challenges the detectors are facing, we further discuss the recent progress on the metasurfaces integrated on the photodetectors and demonstrate their role in improving device performance. All information provided in this paper aims to open a new way to boost high-performance infrared photodetectors.

engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation
Next-generation infrared photodetectors utilising advanced semiconductor nanowires on silicon

Qiandong Zhuang,Doris Mutschall

2020-01-01

Abstract:This project aims to develop next generation infrared photodetectors in the mid-infrared spectral range of 3.0-5.0 um that operate at high operating temperature with high detectivity, much reduced cost and capable integration with silicon CMOS technology. This will be achieved through the use of advanced InAsSb nanowires on silicon substrate. This project demonstrated prototype single element
Silicon/2D-material photodetectors: from near-infrared to mid-infrared

Chaoyue Liu,Jingshu Guo,Laiwen Yu,Jiang Li,Ming Zhang,Huan Li,Yaocheng Shi,Daoxin Dai

DOI: https://doi.org/10.1038/s41377-021-00551-4

2021-06-09

Light: Science and Applications

Abstract:Abstract Two-dimensional materials (2DMs) have been used widely in constructing photodetectors (PDs) because of their advantages in flexible integration and ultrabroad operation wavelength range. Specifically, 2DM PDs on silicon have attracted much attention because silicon microelectronics and silicon photonics have been developed successfully for many applications. 2DM PDs meet the imperious demand of silicon photonics on low-cost, high-performance, and broadband photodetection. In this work, a review is given for the recent progresses of Si/2DM PDs working in the wavelength band from near-infrared to mid-infrared, which are attractive for many applications. The operation mechanisms and the device configurations are summarized in the first part. The waveguide-integrated PDs and the surface-illuminated PDs are then reviewed in details, respectively. The discussion and outlook for 2DM PDs on silicon are finally given.

English Else
Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives

Maurizio Casalino,Giuseppe Coppola,Mario Iodice,Ivo Rendina,Luigi Sirleto

DOI: https://doi.org/10.3390/s101210571

IF: 3.9

2010-11-29

Sensors

Abstract:Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.

engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation

Progress on Si-based Near-infrared Light Detectors

Recent Progress on Infrared Photodetectors Based on InAs and InAsSb Nanowires

The Research Progress of Si-based Blocked-Impurity-band Infrared Detecting Materials and Detectors

Deep-Level Impurity Enabled Planar Filterless Narrowband Near-Infrared Si Photodetector

THE PROGRESSES IN THE STUDY ON Si BASED HETEROSTRUCTURE MATERIALS FOR PHOTODETECTOR

Recent Progress of Infrared Photodetectors Based on Lead Chalcogenide Colloidal Quantum Dots

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Recent Progress in Mid- and Far-Infrared Semiconductor Detectors

Development of Far-Infrared Semiconductor Detectors

All-silicon photovoltaic detectors with deep ultraviolet selectivity

Si/Organic Integrated Narrowband Near-Infrared Photodetector

Recent developments of infrared photodetectors with low-dimensional inorganic nanostructures

Silicon nanowires array capped with two shells as light-absorption antenna for self-driven broadband photodetectors

Highly Sensitive Narrowband Si Photodetector With Peak Response at Around 1060 nm

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

Research progress of quantum dot enhanced silicon-based photodetectors

On‐Chip Room‐Temperature Operated Short‐Wavelength‐Infrared Si:S Photodetector with a Vertical Junction

Recent Progress in Improving the Performance of Infrared Photodetectors via Optical Field Manipulations

Next-generation infrared photodetectors utilising advanced semiconductor nanowires on silicon

Silicon/2D-material photodetectors: from near-infrared to mid-infrared

Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives